Abstract
High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhalogen percentage, while GaAs showedincreased etch rates with plasma composition in both chemistries. Etchrates of all materials increased substantially with increasing rf chuckpower, but rapidly decreased with chamber pressure. Selectivities >10 forGaAs and GaSb over AlGaAs were obtained in both chemistries. The etchedsurfaces of GaAs showed smooth morphology, which were somewhat better withICl/Ar than with IBr/Ar discharge. Auger Electron Spectroscopy analysisrevealed equirate of removal of group III and V components or thecorresponding etch products, maintaining the stoichiometry of the etchedsurface.
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Hahn, Y.B., Hays, D.C., Cho, H. et al. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs. Plasma Chemistry and Plasma Processing 20, 405–415 (2000). https://doi.org/10.1023/A:1007000613045
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DOI: https://doi.org/10.1023/A:1007000613045