Abstract
Electron-diffraction and electron-microscope methods were used to investigate the structure of Cu2Se films of close to stoichiometric composition. It is shown that in polycrystalline and single-crystal films of thickness >400Å at room temperature, the tetragonal modification is stable, which at temperatures above 400°K is transformed into the cubical modification. In thinner films d<400 Å the cubical modification of copper selenide is stable at room temperature. A sharp peak is observed at 400°K on the temperature dependence of the resistance; this is connected with the phase transition. At room temperature, copper selenide is a degenerate p-type semiconductor with carrier concentration 5 · 1022–8 · 1020 cm−3, depending on the thickness of the film.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 90–94, August, 1973.
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Kogut, A.N., Mel'nik, A.I., Mikolaichuk, A.G. et al. Structure and electrical properties of thin films of copper selenide. Soviet Physics Journal 16, 1113–1116 (1973). https://doi.org/10.1007/BF00890467
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DOI: https://doi.org/10.1007/BF00890467