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Synthesis of chromium silicide with laser pulses

  • Surfaces And Multilayers
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Abstract

Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence.

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Authors and Affiliations

  1. Dipartimento di Fisica, Università di Lecce, Lecce, Italy

    E. D'Anna, G. Leggieri & A. Luches

  2. Dipartimento di Scienze dei Materiali, Università di Lecce, Lecce, Italy

    A. V. Drigo

  3. Dipartimento di Scienze dei Materiali e delle Terra, Università di Ancona, Ancona, Italy

    G. Majni & P. Mengucci

Authors
  1. E. D'Anna
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  2. A. V. Drigo
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  3. G. Leggieri
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  4. A. Luches
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  5. G. Majni
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  6. P. Mengucci
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D'Anna, E., Drigo, A.V., Leggieri, G. et al. Synthesis of chromium silicide with laser pulses. Appl. Phys. A 50, 411–415 (1990). https://doi.org/10.1007/BF00323599

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  • DOI: https://doi.org/10.1007/BF00323599

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