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Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures

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Abstract

It is shown that the optical activation of Yb in GaAs and low-dimensional GaAs/GaAlAs structures can be achieved by forming three-component (Yb+S/Se/Te+O) luminescence centers based on the Yb3+ ion. A correlation between the characteristics of these centers and the parameters of the chalcogen coactivators is discovered. Oxygen is shown to play a decisive role in transferring the energy of electron-hole pairs to the luminescence centers.

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Authors and Affiliations

  1. P. N. Lebedev Physics Institute, Russian Academy of Sciences, 117924, Moscow, Russia

    A. A. Gippius, V. M. Konnov, V. A. Dravin, N. N. Loiko, I. P. Kazakov & V. V. Ushakov

Authors
  1. A. A. Gippius
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  2. V. M. Konnov
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  3. V. A. Dravin
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  4. N. N. Loiko
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  5. I. P. Kazakov
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  6. V. V. Ushakov
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Additional information

Fiz. Tekh. Poluprovodn. 33, 677–679 (June 1999)

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Gippius, A.A., Konnov, V.M., Dravin, V.A. et al. Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures. Semiconductors 33, 627–629 (1999). https://doi.org/10.1134/1.1187743

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  • DOI: https://doi.org/10.1134/1.1187743

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