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Compound formation in Ni/In thin film systems

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Abstract

Interface compound formation in Ni/In film couples has been studied by means of the PAC method using radioactive111In probe atoms. Subsequent occurrence of the compounds Ni10In27, Ni2In3, NiIn and Ni3In has been observed after isochronal annealing. Interdiffusion was found to start at temperatures about 250K whereby Ni propagates into the In film.

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References

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Author notes

  1. X. L. Ding

    Present address: Beijing Normal University, Beijing, P.R. China

Authors and Affiliations

  1. Fakultät für Physik, Universität Konstanz, 7750, Konstanz, FRG

    R. Platzer, U. Wöhrmann, X. L. Ding, R. Fink, G. Krausch, J. Voigt, R. Wesche & G. Schatz

Authors
  1. R. Platzer
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  2. U. Wöhrmann
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  3. X. L. Ding
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  4. R. Fink
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  5. G. Krausch
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  6. J. Voigt
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  7. R. Wesche
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  8. G. Schatz
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Platzer, R., Wöhrmann, U., Ding, X.L. et al. Compound formation in Ni/In thin film systems. Hyperfine Interact 60, 1003–1006 (1990). https://doi.org/10.1007/BF02399915

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  • DOI: https://doi.org/10.1007/BF02399915

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