Abstract
Thin films of MoS x have been prepared on silicon substrates by spin coating and thermolysis of 0.5 M solutions of alkyldiammonium tetrathiomolybdates in 1,2-ethanediamine (EDA) and 1,2-propanediamine (12PDA). The films have been heat treated in air at temperatures between 80 and 250°C and under N2 atmosphere at temperatures between 300 and 800°C. X-ray diffraction shows a restricted crystallisation and amorphous residues in both kind of films. EDA-based films exhibit a high tendency to crystallise whereas 12PDA-based films form associated structures with the solvent preventing precursor crystallisation. An insight into the processes occurring in film formation is gained by infrared spectroscopy which indicates a beginning of the decomposition of the 12PDA-based film at temperatures as low as 80°C with incorporation of the diamine solvent. In contrast, the EDA-based films show first signs of a decomposition at 150°C. The decomposition of the intermediate MoS3 in both cases starts between 250 and 300°C. By means of SNMS depth profiles carbon contents up to 21 and 32 atom-% were found in EDA- and 12PDA-based films, respectively. The films show a significant deficit of sulphur which is compensated by the carbon. Near the surface of the coatings a loss of carbon is observed.
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Pütz, J., Aegerter, M. MoS x Thin Films by Thermolysis of a Single-Source Precursor. Journal of Sol-Gel Science and Technology 19, 821–824 (2000). https://doi.org/10.1023/A:1008728604305
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DOI: https://doi.org/10.1023/A:1008728604305