ALBERT

Description: The wide variety of silicon materials used by various groups to investigate LeTID make it difficult to directly compare the defect concentrations (Nt) using the typical normalised defect density (NDD) metric. Here, we propose a new formulation for a relative defect concentration (β) as a correction for NDD that allows flexibility to perform lifetime analysis at arbitrary injection levels (Δn), away from the required ratio between Δn and the background doping density (Ndop) for NDD of Δn/N dop = 0.1. As such, β allows for a meaningful comparison of the maximum degradation extent between different samples in different studies and also gives a more accurate representative value to estimate the defect concentration. It also allows an extraction at the cross-over point in the undesirable presence of iron, or flexibility to reduce the impact of modulation in surface passivation. Although the accurate determination of β at a given Δn requires knowledge of the capture cross-section ratio (k), the injection-independent property of the β formulation allows a self-consistent determination of k. Experimental verification is also demonstrated for boron-oxygen related defects and LeTID defects, yielding k-values of 10.6 ± 3.2 and 30.7 ± 4.0, respectively, which are within the ranges reported in the literature. With this, when extracting the defect density at different Δn ranging between 1014 /cm3 to 1015 /cm3 with Ndop = 9.1 ×1015 /cm3, the error is less than 12% using β, allowing for a greatly improved understanding of the defect concentration in a material.

Description: Measurements of frequency dependent ferromagnetic resonance (FMR) and spin pumping driven dc voltage (Vdc) are reported for amorphous films of Fe78Ga13B9 (FeGaB) alloy to address the phenomenon of self-induced inverse spin Hall effect (ISHE) in plain films of metallic ferromagnets. The Vdc signal, which is antisymmetric on field reversal, comprises of symmetric and asymmetric Lorentzians centered around the resonance field. Dominant role of thin film size effects is seen in setting the magnitude of static magnetization, Vdc and dynamics of magnetization precession in thinner films (≤ 8 nm). The film thickness dependence of magnetization parameters indicates the presence of a magnetically disordered region at the film – substrate interface, which may promote preferential flow of spins generated by the precessing magnetization towards the substrate. However, the Vdc signal also draws contributions from rectification effects of a ≈ 0.4 % anisotropic magnetoresistance and a large (≈ 54 nΩ.m) anomalous Hall resistivity (AHR) of these films which ride over the effect of spin – orbit coupling driven spin-to-charge conversion near the film – substrate interface. We have addressed these data in the framework of the existing theories of electrodynamics of a ferromagnetic film subjected to radio-frequency field in a coplanar waveguide geometry. Our estimation of the self-induced ISHE for the sample with 54 nΩ.m AHR shows that it may contribute significantly (≈ 90%) to the measured symmetric voltage. This study is expected to be very useful for fully understanding the spin pumping induced dc voltages in metallic ferromagnets with disordered interfaces and large anomalous Hall effect.

Description: A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

Description: Electronic skin (E-skin) has attracted much attention in smart wearables, prosthetics, and robotics. The capacitive-type pressure sensor is generally regarded as one good option to design tactile sensing devices owing to its superior sensitivity in low-pressure region, fast response time and convenient manufacturing. Introducing microstructures on electrode surface is an effective approach to achieve highly sensitive capacitive pressure sensors. In this work, an electromechanical model is proposed to build the relationship between capacitance change and compressive force. The present model can predict the sensitivity of capacitive pressure sensor with microstructured electrodes, where each cellular microstructure is modeled using the contact mechanics theory. It is the first time in the literature that based on Hertz theory framework, one rigorous electromechanical theory framework is established to model flexible capacitive pressure sensor, and the model can be extended to other microstructures, such as micro-pyramid, micro-pillar, and micro-dome array. The validation indicates that the analytical results well agree with the experimental data from our previous work and other literatures. Moreover, the present model can well capture the sensitivity of pressure sensor on the beginning range of small pressure. The sensitivity on this range is the most significant for the E-skin due to its robust linearity for one pressure sensor. Besides, we analyzed the compressive force-displacement relationship, the compressive force-contact radius relationship and the influences of the geometrical and material parameters on the electromechanical coupling effect. The results show that the height and the Young’s modulus of the soft dielectric layer are regarded as the dominant influencing factors in the sensitivity of capacitive pressure sensors.

Description: Very often Deep Level Transient Spectroscopy (DLTS) specimens deviate from ideal textbook examples making the interpretation of spectra a huge challenge. This challenge introduces inaccurate estimates of the emission signatures and the lack of appropriate estimates for the concentrations of the observed trap levels. In this work it is shown with the example of high-purity germanium that Technology computer aided design including symbolic differentiation provides the necessary numerical stability over a wide temperature range to model DLTS spectra. Moreover this high-purity germanium is a quasi intrinsic semiconductor for which it is well-known that the original small signal theory can introduce strong errors. It is furthermore shown that the parasitic impact of fractional filling and high resistivity material can be modelled and that these modelled spectra can in the future assist the interpretation of experimental results.

Description: As an efficient approach to improve the visibility, defogging technology is essential for the operation of ports and airports. This paper proposes a new and hybrid defogging technology, i.e. electric–acoustic defogging method. Specifically, the droplets are charged by corona discharge, which is beneficial to overcome the hydrodynamic interaction force to improve the droplet collision efficiency. Meanwhile, sound waves (especially acoustic turbulence) promote the relative movement of droplets to increase the collision probability. In this study, the effects of acoustic frequency ( f ), sound pressure level (SPL), and voltage (V) on the droplet growth ratio were studied by orthogonal design analysis. The results of difference analysis and multi-factor variance analysis show that frequency and sound pressure level are the dominant factors that affect the collision of droplets, and the effect of voltage is relatively weak. And f = 400 Hz, SPL = 132 dB, and V = -7.2 kV are the optimal parameters in our experiment. In addition, we further studied the impact of single factor on droplet growth ratio. The results show that there is an optimal frequency of 400 Hz. That is, the impact of frequency is non-linear. The droplet growth ratio increases with sound pressure level and voltage level. The new technology proposed in this paper can provide a new approach for defogging in open space.

Description: The generation of a large cold plasma jet while maintaining the reproducibility and homogeneity of the discharge is one of the major challenges encountered by the plasma community to efficiently apply this technology in the industry. Here, we report on the discharge in a recently developed device called the plasma candle (PC), wherein a stable plasma jet with a diameter of 20 mm can be generated at atmospheric pressure and temperature. Unlike the discharge morphology previously reported for conventional plasma jet devices, the unique configuration of PC device resulted in distinctive discharge patterns. Homogenous discharge was generated in the electrode gap and followed by a swirling discharge toward the tube nozzle. Fast photography and electrical measurements revealed that filament propagation and its morphology form the visually observable swirl discharge. Detailed analysis indicated that residual helium metastable species (Hem) and their penning ionization play an essential role in the discharge mode and its transition, which was verified by changing the feeding gas and the frequency of the applied voltage. For instance, it is found that only filamentary discharge was observed along the entire tube at frequencies less than 3 kHz, at which the time between consecutive discharges was long enough for Hem decay. Consequently, the homogenous discharge pattern was recovered by increasing the pre-ionization levels by adding a trace of impurities (N2, O2 or H2O) to the feeding gas. However, the level of these impurities must be carefully adjusted to achieve a homogenous discharge without negatively affecting the jet properties. A trivial change in the gas impurity, in the range of adsorption and desorption of water from the gas tubing, is sufficient to cause a noticeable change and instability in the discharge mode. This finding is critical to predicting the production of reactive species and plasma-surface interaction for different applications.

Description: Two-dimensional (2D) materials, due to their unique electronic, optical and structural properties, have attracted extensive attention of researchers in the world. However, most of 2D materials have low optical absorption efficiencies in the visible and near-infrared regimes, which leads to the weak light–matter interaction and limits their further applications in optoelectronic devices. Thus, enhancing the light–matter interaction of various 2D materials in the visible and near-infrared regimes, has been a key topic for many optoelectronic equipment and related applications. In this topical review, we summarized the recent developments of the 2D materials-based optical absorbers in the visible and near infrared regimes, focusing mainly on the methods and relevant physical mechanisms of several typical perfect absorbers, such as narrowband perfect absorbers, dual-band perfect absorbers, and broadband perfect absorbers. Finally, several prospective research directions from our perspectives are presented at the end.

Description: Although many studies have been done and advanced progress has been made in understanding partial discharge (PD) behavior in the void, this is not the case firinception of PD, especially its stochastic nature. The statistical behaviors of PD inception voltage (PDIV) and inception time delay (PDTD) inside the void were investigated in this study through repeated tests to observe the stochastic nature of PD inception. The results show that the PDIV and PDTD of the void are highly dispersed and obey Weibull and exponential distributions, respectively. The significant dispersion of PDIV can be attributed to the statistical time delay of PD inception. The lengthy inception delay is attributable to a lack of free electrons. The exponential distribution of PDTD indicates that free-electron generation is completely random; further, the stochastic nature of void PD inception is determined by the supply of free electrons. The test method (voltage rise rate, test time, and test time interval), void parameters (size, material, and surface condition), and background radiation determine PD inception by affecting the volume ionization or surface-emission process providing free electrons. Enhanced background ionization or significant increase in test voltage and test time allow for the effective detection of void defects during PD tests. This work contributes to an empirical understanding of the physical process of PD inception in voids and improving existing PD testing technologies.

Description: There is a widely observed phenomenon in the microwave absorption field that an absorber always exhibits good oblique incidence absorption capacity if it has high performance at normal incidence. However, if a certain angle is exceeded, this kind of effective absorptive capacity will no longer be maintained. Besides, an absorber performs differently for incident transverse electric (TE) and transverse magnetic (TM) waves: for the TE case, the absorber can no longer obtain effective absorption; for the TM case, another efficient absorption region was observed at higher frequencies even when the incident angle exceeded 80°. These phenomena are widely found in the literature, which demonstrates that they are caused by physical laws rather than material properties. To demonstrate the underlying reason, in this study, the common spherical carbonyl iron-polyurethane composite absorbers were fabricated as a typical example. Their absorbing performance was investigated via both simulation and experiment. All the phenomena mentioned above were observed, studied in detail by employing the multiple reflection model, and explained quantitatively. Further, along with establishing the underlying mechanism of electromagnetic wave transmission in the absorber, two formulas were deduced to predict: (a) the maximum incident angle for efficient absorption of the TE polarized wave; and (b) the required absorber thickness for obtaining efficient absorption for a large incident angle of the TM polarized wave.