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    Tectonics of the Nanga Parbat Syntaxis and the Western Himalaya : [papers in this volume arise from the thirteenth Himalaya-Karakoram-Tibet Workshop held in the University of Peshawar, Pakistan on 20 - 22 April 1998] (2000)
    London : The Geological Society
    Details
    Keywords: Pakistan ; Geologie ; Geomorphologie ; Tektonik ; Orogenese ; Himalaja ; Historische Geologie ; Platte ; Geologie ; Kontinentale Erdkruste ; Metamorphose ; Geochronologie ; Nanga Parbat ; Topografie ; Epirogenese ; Tiefenstruktur ; Gravimetrie ; Nanga-Parbat-Gebiet ; Lithosphäre ; Erdmantel ; Plattentektonik ; Tiefentektonik ; Tektonosphäre ; Plate Tectonics ; Himalaya Mountains ; Nanga Parbat (Pakistan) ; Himalaya Mountains Region
    Description / Table of Contents: Tectonics of the Nanga Parbat syntaxis and the western Himalaya: an introduction / Peter J. Treloar, Michael P. Searle, M. Asif Khan and M. Qasim Jan / Geological Society, London, Special Publications, 170, 1-6, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.01 --- The gravity field of the Karakoram Mountain Range and surrounding areas / A. Caporali / Geological Society, London, Special Publications, 170, 7-23, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.02 --- Mafic sheets from Indian plate gneisses in the Nanga Parbat syntaxis: their significance in dating crustal growth and metamorphic and deformation events / P. J. Treloar, M. T. George and A. G. Whittington / Geological Society, London, Special Publications, 170, 25-50, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.03 --- Structural evolution of the western margin of the Nanga Parbat massif, Pakistan Himalaya: insights from the Raikhot-Liachar area / R. W. H. Butler / Geological Society, London, Special Publications, 170, 51-75, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.04 --- Tectonics of the SW margin of the Nanga Parbat-Haramosh massif / M. A. Edwards, W. S. F. Kidd, M. A. Khan and D. A. Schneider / Geological Society, London, Special Publications, 170, 77-100, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.05 --- The evolution of the Main Mantle Thrust in the Western Syntaxis, Northern Pakistan / T. W. Argles / Geological Society, London, Special Publications, 170, 101-122, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.06 --- Geological structure of the southern part of the Nanga Parbat massif, Pakistan Himalaya, and its tectonic implications / R. W. H. Butler, J. Wheeler, P. J. Treloar and C. Jones / Geological Society, London, Special Publications, 170, 123-136, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.07 --- Geochronological constraints on the evolution of the Nanga Parbat syntaxis, Pakistan Himalaya / P. J. Treloar, D. C. Rex, P. G. Guise, J. Wheeler, A. J. Hurford and A. Carter / Geological Society, London, Special Publications, 170, 137-162, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.08 --- Unroofing of the Nanga Parbat Himalaya / J. F. Shroder and M. P. Bishop / Geological Society, London, Special Publications, 170, 163-179, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.09 --- Remote sensing and geomorphometric assessment of topographic complexity and erosion dynamics in the Nanga Parbat massif / M. P. Bishop and J. F. Shroder / Geological Society, London, Special Publications, 170, 181-200, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.10 --- Tracing the origins of the western Himalaya: an isotopic comparison of the Nanga Parbat massif and Zanskar Himalaya / A. Whittington, N. B. W. Harris, M. W. Ayres and G. Foster / Geological Society, London, Special Publications, 170, 201-218, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.11 --- From buckling to asymmetric folding of the continental lithosphere: numerical modelling and application to the Himalayan syntaxes / J.-P. Burg and Y. Podladchikov / Geological Society, London, Special Publications, 170, 219-236, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.12 --- Mantle exhumation along the Tirich Mir Fault Zone, NW Pakistan: pre-mid-Cretaceous accretion of the Karakoram terrane to the Asian margin / A. Zanchi, S. Poli, P. Fumagalli and M. Gaetani / Geological Society, London, Special Publications, 170, 237-252, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.13 --- New field, structural and geochronological data from the Shyok and Nubra valleys, northern Ladakh: linking Kohistan to Tibet / R. F. Weinberg, W. J. Dunlap and M. Whitehouse / Geological Society, London, Special Publications, 170, 253-275, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.14 --- Geological evolution of the Hindu Kush, NW Frontier Pakistan: active margin to continent-continent collision zone / P. R. Hildebrand, M. P. Searle, Shakirullah, Zafarali Khan and H. J. Van Heijst / Geological Society, London, Special Publications, 170, 277-293, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.15 --- Pre-collisional anastomosing shear zones in the Kohistan arc, NW Pakistan / L. Arbaret, J.-P. Burg, G. Zeilinger, N. Chaudhry, S. Hussain and H. Dawood / Geological Society, London, Special Publications, 170, 295-311, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.16 --- Timing of magmatic and metamorphic events in the Jijal complex of the Kohistan arc deduced from Sm-Nd dating of mafic granulites / H. Yamamoto and E. Nakamura / Geological Society, London, Special Publications, 170, 313-319, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.17 --- Isotopic constraints on the evolution of metamorphic conditions in the Jijal-Patan complex and the Kamila Belt of the Kohistan arc, Pakistan Himalaya / R. Anczkiewicz and D. Vance / Geological Society, London, Special Publications, 170, 321-331, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.18 --- Formation of mélanges in the Indus Suture Zone, Ladakh Himalaya by successive subduction-related, collisional and post-collisional processes during Late Mesozoic-Late Tertiary time / A. H. F. Robertson / Geological Society, London, Special Publications, 170, 333-374, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.19 --- The Main Mantle Thrust in Pakistan: its character and extent / J. A. DiPietro, A. Hussain, I. Ahmad and M. A. Khan / Geological Society, London, Special Publications, 170, 375-393, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.20 --- Crustal shortening estimates across the north Indian continental margin, Ladakh, NW India / R. I. Corfield and M. P. Searle / Geological Society, London, Special Publications, 170, 395-410, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.21 --- Glaucophane and barroisite eclogites from the Upper Kaghan nappe: implications for the metamorphic history of the NW Himalaya / B. Lombardo, F. Rolfo and R. Compagnoni / Geological Society, London, Special Publications, 170, 411-430, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.22 --- Metamorphic evolution, 40Ar-39Ar chronology and tectonic model for the Neelum valley, Azad Kashmir, NE Pakistan / D. Fontan, M. Schouppe, C. J. Hunziker, G. Martinotti and J. Verkaeren / Geological Society, London, Special Publications, 170, 431-453, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.23 --- Exotic conglomerates of the Neogene Siwalik succession and their implications for the tectonic and topographic evolution of the Western Himalaya / I. A. Abbasi and P. F. Friend / Geological Society, London, Special Publications, 170, 455-466, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.24 --- Stratigraphic and tectonic evolution of the northwestern Indian plate and Kabul Block / M. S. Badshah, E. Gnos, M. Q. Jan and M. I. Afridi / Geological Society, London, Special Publications, 170, 467-476, 1 January 2000, https://doi.org/10.1144/GSL.SP.2000.170.01.25
    Pages: Online-Ressource (VII, 476 Seiten) , Illustrationen, Diagramme, Karten
    ISBN: 1862390614
    URL: http://sp.lyellcollection.org/content/170/1
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an approach of using AlN/AlGaN superlattices (SLs) for threading-dislocation-density reduction to grow high quality thick AlGaN on sapphire. Using x-ray diffraction (XRD) measurements and etch pits counting by atomic force microscopy, we show that the insertion of AlN/AlGaN SLs suppresses the material mosaicity and decreases the threading dislocation density by two orders of magnitude, and then eliminates cracking. Dislocation densities deduced from the XRD results and those from chemical etching are in a good agreement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494858
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  • 3
    Electronic Resource
    Electronic Resource
    Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7001-7004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic processes of the free excitonic transitions in GaN grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A- and B-excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362448
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  • 4
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns(approximate)1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120852
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  • 5
    Electronic Resource
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    High quality AlxGa1−xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first low pressure (76 Torr) metalorganic chemical vapor deposition of AlxGa1−xN using trimethylamine alane (TMAAl) as the aluminum source. AlxGa1−xN epilayers deposited using TMAAl exhibited an excellent surface morphology and very strong room temperature photoluminescence. For AlN layers (using TMAAl as the aluminum precursor) we obtained a total carbon contamination level as low as 1017 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113075
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  • 6
    Electronic Resource
    Electronic Resource
    Infrared reflectance of AlN–GaN short period superlattice films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2372-2377 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature infrared reflectance of AlN–GaN short period superlattice films has been measured. These superlattice films were deposited by switched atomic layer metalorganic chemical vapor deposition onto GaN or AlN buffer layers deposited on basal plane sapphire substrates. The measured reflectance spectra are compared to calculated spectra using an effective medium theory to model the dielectric function of the superlattice. The optical properties of the individual materials making up the samples are modeled with Lorentz oscillators using only bulk input parameters. The effects of film and substrate anisotropy and off-normal incidence are included in the calculation. Using this modeling technique, it is possible to obtain thickness estimates for the superlattice film and the buffer layer. The complicated structures seen in the reststrahl region reflectance of these films are also analyzed by comparison to the calculated spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363072
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  • 7
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    Electronic Resource
    The nature of donor conduction in n-GaN (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5901-5903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type conduction. In this communication we present the first systematic study of near conduction band edge states in n-type GaN samples deposited over basal plane sapphire substrates using low pressure metal organic chemical vapor deposition. Electron spin resonance, low temperature photoluminescence, and Van der Pauw–Hall measurements were used as the basis for our study. We concluded that the residual n-type conduction in GaN results from a band of delocalized donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354168
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  • 8
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    Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4700-4702 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently several research groups, including ours, have reported on the deposition of extremely high quality single crystal GaN layers over sapphire substrates. One of the keys to obtaining the high quality was the use of a thin AlN or GaN buffer layer between the sapphire substrate and the grown film. In this communication, we discuss the crystallinity and the influence of the buffer layer in controlling the crystalline, optical, and the electrical properties of the GaN depositions. We also compare the use of GaN and AlN as the buffer layer material. Our results indicate that the buffer layer thickness and the total film thickness are the key factors controlling the electrical, optical, and crystalline properties of the GaN depositions over sapphire substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354069
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  • 9
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    Electronic Resource
    Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2832-2834 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412591
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  • 10
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    Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1903-1905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×1017 cm−3 and the Hall mobility was up to 40 cm2/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrier photodetectors with the cut-off wavelength of 278 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402159
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