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  • 1
    Keywords: Environment ; Renewable energy resources ; Energy policy ; Energy and state ; Energy efficiency ; Climate change ; Renewable energy sources ; Alternate energy sources ; Green energy industries ; Environmental engineering ; Biotechnology ; Sustainable development ; Environment ; Sustainable Development ; Energy Policy, Economics and Management ; Energy Efficiency (incl. Buildings) ; Climate Change Management and Policy ; Renewable and Green Energy ; Environmental Engineering/Biotechnology
    Description / Table of Contents: 1 “Diffusive Demand” and “Creative Demand” --- 2 The 21st Century Paradigm and the Role of Information Technology --- 3 “Vision 2050” as the Rescue of a “Limited Earth” --- 4 Finding a Way Out Through Creative Demand, I --- 5 Finding a Way Out Through Creative Demand, II --- 6 Toward the Realization of a “Platinum Society”
    Pages: Online-Ressource (XXIX, 103 pages) , 30 illustrations, 29 illustrations in color
    ISBN: 9784431545590
    Language: English
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  • 2
    Keywords: Environment ; Renewable energy resources ; Energy policy ; Energy and state ; Energy efficiency ; Climate change ; Renewable energy sources ; Alternate energy sources ; Green energy industries ; Environmental engineering ; Biotechnology ; Sustainable development ; Environment ; Sustainable Development ; Energy Policy, Economics and Management ; Energy Efficiency (incl. Buildings) ; Climate Change Management and Policy ; Renewable and Green Energy ; Environmental Engineering/Biotechnology
    Description / Table of Contents: 1 “Diffusive Demand” and “Creative Demand” --- 2 The 21st Century Paradigm and the Role of Information Technology --- 3 “Vision 2050” as the Rescue of a “Limited Earth” --- 4 Finding a Way Out Through Creative Demand, I --- 5 Finding a Way Out Through Creative Demand, II --- 6 Toward the Realization of a “Platinum Society”
    Pages: Online-Ressource (XXIX, 103 pages) , 30 illustrations, 29 illustrations in color
    ISBN: 9784431545590
    Language: English
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  • 3
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    Springer Nature
    Publication Date: 2024-04-07
    Description: Sustainable Development; Energy Policy, Economics and Management; Energy Efficiency (incl. Buildings); Climate Change Management and Policy; Renewable and Green Energy; Environmental Engineering/Biotechnology
    Keywords: Sustainable Development ; Energy Policy, Economics and Management ; Energy Efficiency (incl. Buildings) ; Climate Change Management and Policy ; Renewable and Green Energy ; Environmental Engineering/Biotechnology ; thema EDItEUR::K Economics, Finance, Business and Management::KC Economics::KCV Economics of specific sectors::KCVG Environmental economics ; thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KND Manufacturing industries ; thema EDItEUR::L Law ; thema EDItEUR::R Earth Sciences, Geography, Environment, Planning ; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TC Biochemical engineering ; thema EDItEUR::W Lifestyle, Hobbies and Leisure::WC Antiques, vintage and collectables::WCF Collecting coins, banknotes, medals and other related items
    Language: English
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  • 4
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    Springer Nature
    Publication Date: 2024-03-30
    Description: Sustainability; Climate change; Saturation; Leading country in resolving societal problems; Resource self-sufficiency; Urban mines; Renewable energy; Human-nature symbiosis; Aging society; Longevity; Lifelong learning; Sustainable cities; Low carbon society; Zero emission; Quality of life
    Keywords: Sustainability ; Climate change ; Saturation ; Leading country in resolving societal problems ; Resource self-sufficiency ; Urban mines ; Renewable energy ; Human-nature symbiosis ; Aging society ; Longevity ; Lifelong learning ; Sustainable cities ; Low carbon society ; Zero emission ; Quality of life ; thema EDItEUR::K Economics, Finance, Business and Management::KC Economics::KCM Development economics and emerging economies ; thema EDItEUR::K Economics, Finance, Business and Management::KC Economics::KCV Economics of specific sectors::KCVG Environmental economics
    Language: English
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5450-5454 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A thermocouple method was used to measure the concentration of hydrogen radicals at hydrogen pressures from 0.01 to 30 Torr. The concentration can be calculated from a heat balance at the thermocouple. Under low hydrogen concentration conditions, all terms in the heat balance equation must be estimated accurately. Our results for the measured absolute concentration of the hydrogen radicals at pressures below 1 Torr agreed well with the calculated concentration predicted by a model that is based on the surface dissociation probability at the hot filament and the simulation of diffusion from the filament. With increasing pressure, the hydrogen radical concentration shifted from the surface-dissociation-rate-controlled regime to the diffusion-controlled regime at the hot filament. The agreement between the heat balance at the thermocouple and that at the hot filament shows that the measurement of the hydrogen radical concentration is of the correct order. Our results show that this measurement technique could be used in studying the growth mechanisms in various deposition processes where hydrogen is a main species. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 893-898 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric power consumed by hot tantalum and tungsten filaments used to dissociate hydrogen molecules into hydrogen radicals was measured at filament temperatures of 2000, 2300, and 2500 °C and hydrogen pressures from 0.5–100 Torr. The measured power consumption at pressures above 30 Torr was well represented by a model that assumed thermodynamic equilibrium between H2 and H near the filament. With decreasing pressure, however, the dissociation of H2 shifted from an equilibrium-controlled regime to a surface-reaction-rate controlled regime. The relationship between the power consumption and the pressure in the surface-reaction-rate controlled regime was correlated with the surface dissociation probability, which was determined to range from 0.18 to 0.94. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1020-1021 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuCl microcrystals-doped SiO2 glass is prepared by the co-sputtering method using extremely pure CuCl source materials as well as a pure SiO2 target. Low temperature optical absorption spectra (2 K) show the shift of the Z1,2 as well as the Z3 exciton peaks, indicating that the mean radius of the microcrystals is about 5.8 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1192-1194 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond was deposited on substrates pre-etched with diamond powder using either a microwave plasma chemical vapor deposition method or a hot-filament-assisted chemical vapor deposition method. Density of residual diamond dust (i.e., number of diamond particles per unit area on the surface of a substrate) on the pre-etched substrates was determined using field emission scanning electron microscopy, and ranged from 3.3×107 to 6.6×1010 #/cm2. The diamond nucleation-site density (i.e., number of nucleation sites per unit area on the surface of a substrate) ranged from 1.5×106 sites/cm2, typical of the deposition on a substrate etched with diamond paste, to 1.1×1010 sites/cm2, sufficient to create nanostructured diamond films. We found that the nucleation site density was about 10% of the residual dust density. Our results also show that the residual diamond dust is the main source of nucleation sites for diamond growth on diamond-etched substrates.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1527-1529 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hydrogen-terminated silicon surface was successfully converted to a surface covered with a monolayer of nitrogen. Nitridation was carried out in a vacuum chamber using either dimethylhydrazine [H2N–N(CH3)2] or ammonia at a pressure of 1 mTorr and at temperatures ranging from 400 to 600 °C. In situ x-ray photoelectron spectroscopy measurements revealed that the binding energy and the full width at half-maximum in the nitrogen spectra are the same as those in bulk Si3N4. Nitrogen content at the surface increased as the nitridation time increased and, below 500 °C, saturated at a value that approximately corresponds to a monolayer thickness. These results show the effectiveness of dry chemical processes for preparing uniform Si surfaces terminated with specific atoms or molecules other than hydrogen. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 910-912 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon carbide (SiC) films have been deposited on a silicon substrate by the chemical vapor deposition method using the Si2H6 and C2H2 gas system. The carbon content in the films was dependent on the volume-to-surface ratio (V/S) of the reactor. Study of the film formation mechanism indicated that the change in film composition was caused by V/S-dependent contributions of three film precursors. Films formed by surface reaction of Si2H6 gave a composition of SiC2, while films formed by gaseous species, most plausibly, SiH2 and SiH3C≡CH, showed a stoichiometric composition of SiC.
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