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  • 1
    Keywords: Environment ; Renewable energy resources ; Energy policy ; Energy and state ; Energy efficiency ; Climate change ; Renewable energy sources ; Alternate energy sources ; Green energy industries ; Environmental engineering ; Biotechnology ; Sustainable development ; Environment ; Sustainable Development ; Energy Policy, Economics and Management ; Energy Efficiency (incl. Buildings) ; Climate Change Management and Policy ; Renewable and Green Energy ; Environmental Engineering/Biotechnology
    Description / Table of Contents: 1 “Diffusive Demand” and “Creative Demand” --- 2 The 21st Century Paradigm and the Role of Information Technology --- 3 “Vision 2050” as the Rescue of a “Limited Earth” --- 4 Finding a Way Out Through Creative Demand, I --- 5 Finding a Way Out Through Creative Demand, II --- 6 Toward the Realization of a “Platinum Society”
    Pages: Online-Ressource (XXIX, 103 pages) , 30 illustrations, 29 illustrations in color
    ISBN: 9784431545590
    Language: English
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  • 2
    Keywords: Environment ; Renewable energy resources ; Energy policy ; Energy and state ; Energy efficiency ; Climate change ; Renewable energy sources ; Alternate energy sources ; Green energy industries ; Environmental engineering ; Biotechnology ; Sustainable development ; Environment ; Sustainable Development ; Energy Policy, Economics and Management ; Energy Efficiency (incl. Buildings) ; Climate Change Management and Policy ; Renewable and Green Energy ; Environmental Engineering/Biotechnology
    Description / Table of Contents: 1 “Diffusive Demand” and “Creative Demand” --- 2 The 21st Century Paradigm and the Role of Information Technology --- 3 “Vision 2050” as the Rescue of a “Limited Earth” --- 4 Finding a Way Out Through Creative Demand, I --- 5 Finding a Way Out Through Creative Demand, II --- 6 Toward the Realization of a “Platinum Society”
    Pages: Online-Ressource (XXIX, 103 pages) , 30 illustrations, 29 illustrations in color
    ISBN: 9784431545590
    Language: English
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of chemical & engineering data 19 (1974), S. 384-386 
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 93 (June 2003), p. 411-418 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 29 (1990), S. 1583-1588 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 13 (1974), S. 293-296 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 893-898 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric power consumed by hot tantalum and tungsten filaments used to dissociate hydrogen molecules into hydrogen radicals was measured at filament temperatures of 2000, 2300, and 2500 °C and hydrogen pressures from 0.5–100 Torr. The measured power consumption at pressures above 30 Torr was well represented by a model that assumed thermodynamic equilibrium between H2 and H near the filament. With decreasing pressure, however, the dissociation of H2 shifted from an equilibrium-controlled regime to a surface-reaction-rate controlled regime. The relationship between the power consumption and the pressure in the surface-reaction-rate controlled regime was correlated with the surface dissociation probability, which was determined to range from 0.18 to 0.94. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5450-5454 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A thermocouple method was used to measure the concentration of hydrogen radicals at hydrogen pressures from 0.01 to 30 Torr. The concentration can be calculated from a heat balance at the thermocouple. Under low hydrogen concentration conditions, all terms in the heat balance equation must be estimated accurately. Our results for the measured absolute concentration of the hydrogen radicals at pressures below 1 Torr agreed well with the calculated concentration predicted by a model that is based on the surface dissociation probability at the hot filament and the simulation of diffusion from the filament. With increasing pressure, the hydrogen radical concentration shifted from the surface-dissociation-rate-controlled regime to the diffusion-controlled regime at the hot filament. The agreement between the heat balance at the thermocouple and that at the hot filament shows that the measurement of the hydrogen radical concentration is of the correct order. Our results show that this measurement technique could be used in studying the growth mechanisms in various deposition processes where hydrogen is a main species. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7140-7145 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiO2 films deposited on Si and on thermal SiO2 by tetraethylorthosilicate [TEOS, Si(OC2H5)4]/O3 atmospheric-pressure chemical vapor deposition (APCVD) were analyzed by thermal desorption spectra (TDS). The TDS results show that more silanols were incorporated during deposition and more water was absorbed during and after deposition in films deposited on Si substrates than on thermal oxide substrates. The latter result indicates that the elimination of water by-products is not the limiting step in TEOS/O3 APCVD. Based on the former result, a silanol model was proposed for the surface processes. On surfaces with a uniform and high density of silanol sites, or on which silanols readily form under TEOS/O3 APCVD conditions, the active silanol groups in the gas phase contribute to film formation and replenish silanol sites, resulting in continuous, high growth rates. On surfaces with few silanol sites, it is difficult to form silanol sites and the nonsilanol-containing polysiloxanes contribute to film formation, resulting in continuous, low growth rate. This model explains well both the surface dependence and the memory effect of TEOS/O3 APCVD. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1192-1194 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond was deposited on substrates pre-etched with diamond powder using either a microwave plasma chemical vapor deposition method or a hot-filament-assisted chemical vapor deposition method. Density of residual diamond dust (i.e., number of diamond particles per unit area on the surface of a substrate) on the pre-etched substrates was determined using field emission scanning electron microscopy, and ranged from 3.3×107 to 6.6×1010 #/cm2. The diamond nucleation-site density (i.e., number of nucleation sites per unit area on the surface of a substrate) ranged from 1.5×106 sites/cm2, typical of the deposition on a substrate etched with diamond paste, to 1.1×1010 sites/cm2, sufficient to create nanostructured diamond films. We found that the nucleation site density was about 10% of the residual dust density. Our results also show that the residual diamond dust is the main source of nucleation sites for diamond growth on diamond-etched substrates.
    Type of Medium: Electronic Resource
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