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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1565-1569 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have calculated the temperature dependence of the carrier density in epitaxial layers of semiconductors deposited on semi-insulating substrates when the potentials at the surface and the substrate interface are pinned. The results of these calculations are compared to experiments on thin, nominally undoped p-type layers of GaAs deposited epitaxially on EL2-dominated substrates. The theory predicts that as the temperature is lowered to some critical value the depletion layers at the edges of the epilayer overlap for thin, lightly doped samples. Below this value the carrier density decreases exponentially with inverse temperature with an activation energy which depends on the surface and interface potentials, as well as on the dopant concentration and the width of the layer. This activation energy can be derived analytically for strong depletion. In the intermediate range between negligible and complete depletion of the layer the carrier density must be obtained by numerical methods, and we present the results of such a calculation.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 984-992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of GaAs and (Al,Ga)As doped with boron (from diborane) and silicon was investigated to examine the effect of boron on (DX) centers in silicon-doped material. The addition of diborane to the growth of GaAs and (Al,Ga)As results in the superlinear incorporation of boron into the solid with a concurrent reduction in the growth rate. Boron incorporation also decreases as the growth temperature is increased. Additionally, the AlAs mole fraction increases with increasing diborane during (Al,Ga)As growth. The DX center was not eliminated in (Al,Ga)As by the addition of boron. The thermal stability of these materials was also investigated.
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 74 (1952), S. 6131-6132 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 69 (1947), S. 3142-3142 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1614-1616 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of structural parameters on the transport characteristics from 15 to 300 K of molecular beam epitaxy grown GaInAs/AlInAs two-dimensional electron gas structures lattice matched to InP is determined. The AlInAs buffer layer thickness was varied from 1000 to 10 000 A(ring). One sample also incorporated a GaInAs/AlInAs superlattice. The AlInAs spacer layer was varied from 25 to 200 A(ring). The buffer layer thickness and structure has almost no effect on the mobility or sheet density. Increases in the AlInAs spacer thickness resulted in a monotonically decreasing sheet density and a peak in the mobility at 100 A(ring). The highest 77 K mobility was 66 700 cm2/V s with ND=1.20×1012 cm−2 in the structure with the 100 A(ring) spacer. The effect of illumination and temperature on the sheet concentration in these structures as well as on "bulk'' AlInAs:Si is much smaller than in AlGaAs/GaAs structures or "bulk'' AlGaAs, indicating that devices based on this material system will not be characterized by freeze-out and persistent photoconductivity.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2333-2335 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex/Si p-type modulation-doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet carrier concentration of ∼8×1011 cm−2. This is the highest hole mobility ever reported for p-type Si material at these carrier concentrations. The electrical properties of these heterostructures at low temperatures are those expected of a two-dimensional hole gas at Si/SiGe and SiGe/Si heterointerfaces. The high hole mobility is indicative of excellent interfacial properties. Peak mobilities were observed to depend on the level and proximity of remote B dopant species, as well as the Ge content of the alloyed layers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2701-2703 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Si0.85Ge0.15/Si p-type modulation-doped double heterostructures have been grown by the ultrahigh vacuum/chemical vapor deposition technique, and mobility enhancement has been observed at low temperatures. For heterostructures with Si layers doped with boron to ∼1×1019 cm−3, hole mobilities of ∼900 cm2/V s at 14 K have been obtained. No carrier freeze-out behavior has been observed at low temperatures. The existence of two-dimensional hole gas was determined by the tilted-field Shubnikov–de Haas measurement. Both Si/SiGe and SiGe/Si heterointerfaces were found to be equivalent and of excellent interfacial quality. The valence-band maximum of Si0.85Ge0.15 alloy has been estimated to be (approximately-equal-to)0.95 meV higher than that of Si. A hole effective mass of 0.44±0.03m0, which is consistent with the interpolation of the bulk band structures for the Si0.85Ge0.15 alloy, has been obtained for the heterostructure.
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  • 8
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Multiwire gas proportional detectors have been used for many years on synchrotron radiation experiments and offer unrivaled dynamic range and detection efficiency but have been somewhat limited in count rate performance. We report here recent test results from two new rapid data acquisition systems developed at Daresbury and in addition the results of comparative tests on a new design of gas detector, the Microgap, and a gas Microstrip detector. Both designs appear capable of high rate (approximately-greater-than)100 kHz/mm2 operation and combined with the new acquisition systems should begin to alleviate the count rate problems for some types of experiment.
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of high-pressure proportional counter, with both spatial resolution and spectroscopic capabilities is being jointly developed by the Istituto di Astrofisica Spaziale (CNR), Frascati, Italy and the SERC Daresbury Laboratory, Warrington, UK. The characteristics of the detector can be optimized for the particular requirement of the experiment, either for x-ray astronomy observations from space, or for the high count rate applications associated with a synchrotron light source. In its baseline configuration, the detector is filled to 5 bar with a xenon/quench gas mixture and will be sensitive over the energy range 5 keV to 150 keV (2.5 to 0.08 A(ring)). The positional resolution will range from 500 μm at the lower energies to around 1 mm at the higher end of the energy range. The current prototype has a sensitive area of 200×200 mm. The final version is hoped to have an area closer to 425×425 mm. The very small photon absorption length in the higher pressure gas allows the parallax effect, a feature of 1 atmosphere detectors, to be greatly reduced. The timing resolution (150 ns) of the detector enables both a high-rate capability and the possibility of the escape gate technique to achieve higher spectral resolution at energies (approximately-greater-than) the Xe K edge. Preliminary results are presented showing the spectral and positional resolution for the prototype detector.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 697-699 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: X-ray imaging using storage phosphors is an increasingly popular method of taking data on synchrotron x-ray stations. There are now commercially available scanners, which are being used at Daresbury and most other synchrotron light facilities worldwide. Although the basic principle behind the x-ray stimulation and the subsequent readout of the phosphor has been known for a number of years, the details of the physical mechanisms have not been widely published and appear to be incompletely understood. Users of image plate systems might be surprised to learn of some of the observations made by the Daresbury Detector Development Group during the assessment of the storage phosphor technique as applied to x-ray diffraction on the synchrotron. We present intriguing examples of yet unexplained phenomena which may need to be taken into account for experiments with very low experimental signal-to-noise ratios in their images. Possible future developments in image plate phosphors are also discussed.
    Type of Medium: Electronic Resource
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