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  • 1
    Electronic Resource
    Electronic Resource
    Two-step annealed polycrystalline silicon thin-film transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1883-1890 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of polysilicon thin-film transistors fabricated by two-step annealing, which consists of furnace annealing and the subsequent excimer laser annealing, is described. It was found that the average grain size of low-temperature furnace-annealed polysilicon films was several times larger than that of excimer-laser-annealed polysilicon films while the density of in-grain defect of low-temperature furnace-annealed films was much higher than that of excimer-laser-annealed film. However, the device characteristics of the low-temperature furnace-annealed polysilicon thin-film transistors were improved significantly by postannealing, such as high-temperature furnace annealing and excimer laser annealing, due to the effective elimination of in-grain defects. We found that the significantly improved temperature characteristics of drain current and hydrogen passivation rate of two-step annealed polysilicon thin-film transistors were also caused by the significantly reduced in-grain defects by postannealing. The density of trap states, which was extracted from the transfer curves of polysilicon thin-film transistors, was used to demonstrate the effects of modifying the deep and tail trap levels by two-step annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363002
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  • 2
    Electronic Resource
    Electronic Resource
    Analytical solution of the breakdown voltage for 6H-silicon carbide p+n junction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2796-2797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical solution of the breakdown voltage for 6H-silicon carbide p+n junction has been derived by employing an effective ionization coefficient. The breakdown voltage extracted from our analytical model agrees fairly well with the experimental data in the range of 1016–1018 cm−3 doping levels. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361113
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Fe doping in La1−xSrxMnO3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5164-5168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Fe doping on the magnetic, transport, and magnetoresistance properties are studied for La0.7Sr0.3Mn1−yFeyO3 (y=0–0.18) and La1−xSrxMn0.88Fe0.12O3 (x=0.1–0.50). For increasing y, a peak in the thermal dependence of the resistivity appears and develops at the temperature TPl lower than TC, while the another peak near TC becomes smaller and then disappears. At 78 K the La1−xSrxMn0.88Fe0.12O3 oxides are insulators for x〈0.2 and x〉0.5 and only the lower-temperature metal–insulator transition peak appears for 0.25〈x〈0.45. With increase of x from 0.25, TPl increases, becomes maximum at x=0.4 and then decreases. The temperature dependence of resistivity for the doped samples is quite different from that of the undoped La1−xSrxMnO3 series. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371494
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of operating temperature on optical-absorption coefficient and optical band gap of hydrogenated amorphous silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4456-4458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication reports experimental results concerning the effects of the operating temperature on the optical properties of doped and undoped hydrogenated amorphous silicon films prepared by rf glow discharge. Optical-absorption coefficients of those films increased by about 10%–18% and their optical band gaps decreased linearly by about 4–8×10−4 eV/K with increasing temperature from about 20 to 100 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343263
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  • 5
    Electronic Resource
    Electronic Resource
    Light-induced effects on doped- and undoped-hydrogenated amorphous silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2107-2112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents the light-induced effects on the electrical and optical properties of undoped- and doped-hydrogenated amorphous silicon films. The changes in the conductivities and the activation energies of various types of a-Si:H films due to the prolonged exposure to light have been characterized as a function of deposition conditions and illumination periods. We have also analyzed the variations of microstructure of a-Si:H film such as silicon–hydrogen bondings in the rocking and stretching modes utilizing infrared spectroscopy. From the experimental results, it is clear that doping effects must be crucial to the degradations of the fundamental properties of a-Si:H due to light-induced effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341720
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of the magnetic anisotropy in SmCo5 and GdCo5 : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6134-6136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the magnetic anisotropy constant K1 for SmCo5 and GdCo5 is well reproduced by calculations based on a single-ion model taking into account the anisotropies of the R–Co exchange interaction and the Co-sublattice magnetic moment. The anisotropy of the R–Co exchange interaction plays an important role in reproducing the experimental K1(T) for SmCo5 and GdCo5. It is found that the absolute value of the second order crystalline electric field parameter A02 in SmCo5 decreases monotonically with increasing temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350020
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  • 7
    Electronic Resource
    Electronic Resource
    Substrate dependent internal stress in sputtered zinc oxide thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4333-4336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stresses in zinc oxide (ZnO) films prepared by radio frequency (rf) magnetron sputtering have been studied using a bending beam technique. The stresses exhibited at room temperature have been found to be strongly substrate dependent. The films deposited on gallium–arsenide (GaAs) substrates have exhibited much less compressive stress than those on silicon. This was contrary to what was expected. This may be attributed to: as revealed by x-ray diffraction experiments, the films grown on GaAs are less crystalline so that peening effect could occur less intensively during deposition. The stress varies with different processing conditions, especially substrate temperature and total gas pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350815
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  • 8
    Electronic Resource
    Electronic Resource
    Laser induced implanted oxide (Ll2Ox) and polycrystalline silicon film simultaneously fabricated by excimer laser irradiation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 372-374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to form the gate oxide and recrystallize the polycrystalline silicon (poly-Si) active layer simultaneously is proposed. During the irradiation of excimer laser, the poly-Si film is recrystallized while the oxygen ion impurities injected into the amorphous silicon (a-Si) film are activated by laser energy and react with silicon atoms to form SiO2. Our experimental results show that a high quality oxide and a poly-Si film with fine grain have been fabricated successfully by the proposed method. High quality interface between oxide and poly-Si films has also been obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118416
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  • 9
    Electronic Resource
    Electronic Resource
    The grain growth blocking effect of polycrystalline silicon film by thin native silicon oxide barrier during the excimer laser recrystallization (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 460-462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing is presented. By irradiating the XeCl excimer laser on the triple film structure of a-Si/thin native silicon oxide (∼20 Å)/thick a-Si layer, only the upper a-Si film is recrystallized, whereas the lower thick a-Si film remains amorphous. The thin native silicon oxide layer blocks the grain growth and prevents the upper grains from growing into the lower a-Si. As a result, the thin oxide film sharply defines the boundary between polycrystalline silicon (poly-Si) and the a-Si layer. The poly-Si/a-Si double layer is useful for the fabrication of high-performance poly-Si thin film transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124400
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  • 10
    Electronic Resource
    Electronic Resource
    Raman scattering from LiF cluster-based nanophase film (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 523-525 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering spectra are used to investigate LiF cluster-based nanophase films. The experiments confirm the existence of multi-order-like Raman scattering and surface phonon modes. Good agreement is achieved between the observed spectral lines and the calculated results if the Raman scattering lines are attributed to an appropriate linear combination of primary modes and surface optical modes. The fine structure observed in the case of the smaller cluster has reflected the intensity of the cluster-substrate interaction, which may result in the splitting of Raman peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114077
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