ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Chemical mechanical polishing (CMP) has been widely accepted in modern integratedcircuit (IC) industries and hard disk manufacturing processes, to insure wafer surface with high levelof global and local planarity required. In CMP process, temperature rise has two-edged influences:temperature-rise accelerates the chemical activity and the motion of nano-particles contained in theslurry through which material removal ratio (MRR) is enhanced; the other side of the same coin is,however, that it will soften the pad surface and subsequently reduce the MRR. Furthermore, it isfound that temperature-rise would cause agglomeration of nano-particles, which would cause thewafer surface defect. The net effects of temperature thus should be under investigation with scrutiny.In an attempt to study the temperature variation and influencing rule, in this paper we firstly establishthe flow equation considering pad roughness, coupling the energy equation on the basis ofthermodynamics. Then, by taking numerical simulation which is carried out to give out thetemperature distribution of conventional CMP process. The results show that temperature-rise in theCMP process is very minor. The research will surely shed some lights on the mechanism of CMP andlay a feasible foundation for possible future utilization
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.575-578.1348.pdf
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