ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, the mechanism of the epitaxial growth of 4H SiC using CH3Cl as the carbonsource gas was investigated. The experiments were conducted with a H2 carrier gas flow ratereduced in comparison to the standard conditions used for device-quality, full-wafer C3H8 growth.Low-H2 conditions have been found favorable for investigating the differences between the two gassystems. A non-linear trend of the growth rate dependence on CH3Cl flow was observed. Thisdependence was quantitatively different for C3H8 growth, which serves as an indication of differentkinetics of CH3Cl and C3H8 precursor decomposition, as well as differences in Si droplet formationand dissociation. The maximum growth rate that we were able to achieve was by a factor of twohigher for the CH3Cl precursor than for the C3H8 precursor at the same temperature and flowconditions. The growth on lower off-axis angle substrates produced surface morphology degradationsimilar for both CH3Cl and C3H8 precursor systems
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.171.pdf
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