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  • 11
    Electronic Resource
    Electronic Resource
    Steady-state improved confinement studies in the JT-60U tokamak (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 2249-2255 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As a result of dynamic control of the heat deposition and current profile, notably a large fusion product 4×1020 m−3 s keV (equivalent QDT=0.25) was sustained for 1.5 s in the high-confinement mode (H-mode) discharge accompanied with the edge localized modes (ELM), while the highest performance achieved transiently was 1.2×1021 m−3 s keV (equivalent QDT=0.46). A doubly formed transport barrier at the q=3 surface and near the edge is essential for the improvement in confinement. It has also been found that the active shear formation in the toroidal flow velocity, as well as the magnetic shear, can increase the critical edge pressure at the onset of ELMs, which constrain the maximum fusion performance. Further extension to the high-βN (=〈βt〉apBT/Ip) regime yielded the values of βN=2.9, βp=2.6 and the H-factor (=τE/τEITER-89P) of 2.5 for 0.7 s under the full current-drive condition. In these high-βN discharges, the bootstrap component was 74% of the total plasma current before the beam injection, while the neutral beam current drive (NBCD) fraction was 37%. It is stressed that effective current drive in the central region, which can sustain the peaked current profile against the bootstrap component, is indispensable for the efficient steady-state operation. Major results from the confinement physics studies, such as the characteristics of the primary barrier and the turbulence transport across the secondary barrier, are also addressed in this paper. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871486
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  • 12
    Electronic Resource
    Electronic Resource
    Broadband reflectometry for the density profile and fluctuation measurements in the JT-60 tokamak (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3524-3527 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A broadband reflectometric system in O-mode operation has been developed for the density profile determination, MHD and turbulent fluctuation measurement, and evaluation of the particle diffusion coefficient in the JT-60 tokamak. For the profile determination, full Ka-Q band frequencies of BWOs have been swept in 750 μs, in order to minimize the effect of doppler shift due to the fluctuation of reflection layers. The heterodyne fixed-frequency reflectometer has unveiled its effectiveness to probe MHD activities, diagnosing the m=1 tearing mode oscillations. It has also enabled the observation of the dramatic suppression of edge plasma density fluctuations at the L- to H-mode transition in the LHCD limiter plasma. Furthermore, the propagation delay of density pulses has been observed by different fixed-frequency channels during a series of sawteeth, from which the particle diffusion coefficient was evaluated, with a newly proposed method applicable to fully diffusive plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141562
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  • 13
    Electronic Resource
    Electronic Resource
    Broadband reflectometry for the density profile and fluctuation measurements in the JT-60 tokamak (abstract) : Eight topical conference on high-temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3074-3074 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A broadband reflectometric system in O-mode operation has been developed for the density profile determination, MHD and turbulent fluctuation measurement, and evaluation of the particle diffusion coefficient in the JT-60 tokamak. For the profile determination, full Ka-Q band frequencies of BWOs have been swept in 750 μs, in order to minimize the effect of Doppler shift due to the fluctuation of reflection layers. The heterodyne fixed-frequency reflectometer has unveiled its effectiveness to probe MHD activities, diagnosing the m=1 tearing mode oscillations. It has also enabled the observation of the dramatic suppression of edge plasma density fluctuations at the L to H-mode transition in the LHCD limiter plasma. Furthermore, the propagation delay of density pulses has been observed by different fixed-frequency channels during a series of sawteeth, from which the particle diffusion coefficient was evaluated, with a newly proposed method applicable to fully diffusive plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141738
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  • 14
    Electronic Resource
    Electronic Resource
    Study on ferroelectric domains in BaTiO3 crystalline films and bulk crystals by atomic force and scanning electron microscopies (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 999-1002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed cylindrical 180° domains and 90° multi-domains in crystalline films by an atomic force microscope and in bulk crystals by a scanning electron microscope. The size distribution of the 180° domain end is determined graphically by a computer analysis. A discussion is given on why a thickness dependence of the end size coincides with the theoretical relation proportional to the square root of the thickness over a wide range from 4 nm to 1.4 mm and why the 90° domain is found only in a film of a particular thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368167
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  • 15
    Electronic Resource
    Electronic Resource
    Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102493
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  • 16
    Electronic Resource
    Electronic Resource
    Atomic force and scanning electron microscopic observations of surface and domain structures of BaTiO3 films and bulk crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1486-1488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tapping-mode atomic force and in situ scanning electron microscopic observations of surface and ferroelectric domain structures are performed, respectively, for BaTiO3 crystalline films grown on {100}SrTiO3 substrates by molecular beam epitaxy and for bulk crystals prepared by the top-seeded solution growth technique. Reconstructionlike structures of very long periods are found for the first time in both thin (20 nm) and thick (1000 nm) films. A dependence of the end size of pole-type 180° domains observed in films and bulk crystals on their thickness agrees with the relation expected theoretically. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119944
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  • 17
    Electronic Resource
    Electronic Resource
    Growth and characterization of K3Li2(TaxNb1−x)5O15 crystals for blue second-harmonic-generation applications (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 744-746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Potassium lithium tantalate niobate, K3Li2(TaxNb1−x)5O15, or KLTN single crystals were grown by spontaneous crystallization method, and it has been demonstrated that the KLTN crystal has high potential as a nonlinear crystal for blue second-harmonic-generation (SHG) applications. Ta substitution for Nb site in K3Li2Nb5O15 crystal improves the transparency in the blue light region and decolorizes the material. Compared with K3Li2Nb5O15, the K3Li2Ta5O15 crystal exhibits a 60 nm blueshift of the absorption edge from 376 to 316 nm, and decreases its absorption coefficient from 2.3 to 0.3 cm−1 at 400 nm. The phase-matched frequency doubling of the Ti:sapphire infrared laser for blue SHG at room temperature has been demonstrated with the KLTN bulk crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116728
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  • 18
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de-ionized water treatment (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2837-2839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the scanning tunneling microscopy (STM) images of GaAs(001) surfaces prepared by deoxygenated and de-ionized water (DODIW) treatment. The STM images reveal that the missing-dimer rows and unit cells of the 2×4 structure and atomic-layer steps of Ga–As clearly appear after heating the samples above 500 °C in an ultrahigh vacuum. These experimental results suggest the DODIW treatment can attain atomically flat GaAs(001) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113446
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  • 19
    Electronic Resource
    Electronic Resource
    IDENTIFICATION OF A RECOMBINATIONAL SIGNAL SEQUENCE-SPECIFIC DNA-BINDING PROTEIN(S) OF Mr 115,000 IN THE NUCLEAR EXTRACTS FROM IMMATURE LYMPHOID CELL LINES (1990)
    Oxford, UK : Blackwell Publishing Ltd
    International journal of immunogenetics 17 (1990), S. 0 
    Details
    ISSN: 1744-313X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Rearrangements of immunoglobulin genes are mediated by highly conserved heptamer and nonamer recombinational signal sequence. Using a protein-blotting procedure, a heptamer and nonamer recombinational signal sequence-specific DNA-binding protein(s) was examined in the nuclear extracts from lymphoid and nonlymphoid cell lines. Nuclear extracts were subjected to SDS-polyacrylamide gel electrophoresis, and transferred by electroblotting to nitrocellulose filters. Then the filters were hybridized to *P-labelled synthetic double-stranded heptamer-23bp-nonamer or nonamer- l2bp-heptamer recombinational signal sequence probes. A relatively large amount of a DNA-binding protein(s) of M, 115,000 for both probes was detected in the nuclear extracts from immature B and immature T cell lines. No DNA-binding proteins were detected in a myeloma cell line. Interestingly, this DNA-binding protein(s) might be able to recognize both heptamer and nonamer. Recombinational signal sequence-specific DNA-binding activity of the protein(s) and the presence of the protein(s) in a stage-specific manner strongly suggest that the protein(s) of M, 115,000 detected here may play an important role in the recombination of Ig and TCR genes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1744-313X.1990.tb00860.x
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  • 20
    Electronic Resource
    Electronic Resource
    LiNbO"3 and LiTaO"3 growth by the capillary liquid epitaxial technique
    Amsterdam : Elsevier
    Journal of Crystal Growth 50 (1980), S. 291-298 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(80)90251-1
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