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  • 1
    Digitale Medien
    Digitale Medien
    Application of positron age-momentum correlation measurement to the study of defects in electron irradiated synthetic silica glass (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4553-4559 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Age-momentum measurements and positron lifetime measurements were carried out in order to investigate vacancy-type defects produced in 3 MeV electron irradiated synthetic silica glasses, in which 1 ppm and 300 ppm of –OH bonds were contained. A high formation probability of positronium (Ps) was found for unirradiated specimens. These Ps atoms were considered to be formed in open-volume defects (∼7×10−2 nm3). The formation probability of Ps was drastically decreased by the electron irradiation, especially for the specimens which contained 1 ppm of –OH bonds, even though the size of the open-volume defects and the momentum distribution of electrons at the open-volume defects are independent on the –OH concentration and on the electron irradiation. Since the values of second lifetime components of positron lifetime spectra were ∼300 ps and very close to the estimated value of the lifetime of the positrons which are considered to be trapped in the mono- or divacancies, the decrease of formation probability of Ps can be attributed to an increase of positron annihilation in vacancy-type defects generated by the electron irradiation. Positrons were suspected to be trapped in such defects.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357287
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  • 2
    Digitale Medien
    Digitale Medien
    Positron annihilation in SiO2/Si structure at low temperature (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3269-3273 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Annihilation characteristics of positrons in SiO2/Si structure were studied by using a monoenergetic positron beam in the temperature range between 50 K and room temperature. In the SiO2 film, positrons formed positronium (Ps) and they annihilated from localized states in open spaces. Below 100 K, the Ps formation was found to be suppressed. This fact was attributed to the trapping of positrons by point defects in the SiO2 film at low temperature. The depth distribution of such traps was not homogeneous; its concentration in the central region of the SiO2 film was higher than that in the regions near the surface or the interface. The potential of monoenergetic positrons for the detection of the point defects provides unique information for depth distributions of hole traps in SiO2 films. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360016
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  • 3
    Digitale Medien
    Digitale Medien
    Study of various types of diamonds by measurements of double crystal x-ray diffraction and positron annihilation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1510-1513 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Annihilation characteristics of positrons in various types of diamonds were studied by measurements of two-dimensional angular correlation of positron annihilation, those of Doppler Broadening profiles and those of lifetime spectra. From the measurements, it was found that there is a small amount of defects in type Ib synthesized diamond and the positron lifetime is 115 ps. On the other hand, it was found that positronium is formed in natural diamonds. Results of the double x-ray measurements suggested that IIa, IIb, and Ia type natural diamonds also may have empty space between crystallites or grain boundaries. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360242
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  • 4
    Digitale Medien
    Digitale Medien
    Positronium formation in SiO2 films grown on Si substrates studied by monoenergetic positron beams (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3822-3828 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The annihilation characteristics of positrons in SiO2 films grown on Si substrates were studied by using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured as a function of incident positron energy for SiO2 (166 nm)/Si specimens fabricated by thermal oxidation. From the measurements, it was found that about 90% of positrons implanted into the SiO2 film annihilate from positronium (Ps) states. This fact was due to the trapping of positrons by open-space defects and a resultant enhanced formation of Ps in such regions. For the SiO2 film grown at 650 °C, the lifetime of ortho-Ps was found to be shorter than that in the film grown at 1000 °C. This result suggests that the volume of open-space defects in the SiO2 film decreased with decreasing the growth rate of the SiO2 film.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356059
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  • 5
    Digitale Medien
    Digitale Medien
    Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 181-186 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Defects in GaN grown using metalorganic chemical vapor deposition were studied through the use of monoenergetic positron beams. For Mg-doped GaN, no large change in the diffusion length of positrons was observed before and after activation of Mg. This was attributed to the scattering of positrons by potentials caused by electric dipoles of Mg–hydrogen pairs. For Si-doped GaN, the line-shape parameter S increased as carrier density increased, suggesting an introduction of Ga vacancy due to the Fermi level effect. Based on these results, we discuss the effects of the growth polar direction of GaN on optical properties in this article. Although the optical properties of a GaN film grown toward the Ga face direction exhibited excitonic features, a film grown toward the N face (−c) direction exhibited broadened photoluminescence and transmittance spectra, and a Stokes shift of about 20 meV was observed. This difference was attributed to extended band-tail states introduced by high concentrations of donors and acceptor-type defects in −c GaN. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1372163
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  • 6
    Digitale Medien
    Digitale Medien
    Depth profiles of vacancy-type defect in Si+-implanted GaAs resulting from rapid thermal annealing (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 396-397 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Depth profiles of vacancy-type defects in the active region of annealed Si+-implanted GaAs were measured by means of the monoenergetic positron beam measurements. Parabolic-type distributions for vacancy-type defects in the depth below the surface were observed in two-step annealed Si+-implanted GaAs. Activation properties by Hall measurements were improved by a two-step rapid thermal annealing technique, whereas the concentration of vacancy defects in active layer below the surface is not changed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342559
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  • 7
    Digitale Medien
    Digitale Medien
    Positron annihilation in a metal-oxide semiconductor studied by using a pulsed monoenergetic positron beam (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7251-7256 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The positron annihilation in a metal-oxide semiconductor was studied by using a pulsed monoenergetic positron beam. Lifetime spectra of positrons were measured as a function of incident positron energy for a polycrystalline Si(100 nm)/SiO2(400 nm)/Si specimen. Applying a gate voltage between the polycrystalline Si film and the Si substrate, positrons implanted into the specimen were accumulated at the SiO2/Si interface. From the measurements, it was found that the annihilation probability of ortho-positronium (ortho-Ps) drastically decreased at the SiO2/Si interface. The observed inhibition of the Ps formation was attributed to an interaction between positrons and defects at the SiO2/Si interface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355015
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  • 8
    Digitale Medien
    Digitale Medien
    SiO2 films deposited on Si substrates studied by monoenergetic positron beams (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 216-222 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Variable-energy positron beams were utilized to study SiO2 films grown on Si substrates. Annihilation characteristics of positrons in the SiO2 films were found to be dominated by the formation probability of positronium (Ps). For the SiO2 film grown by wet oxidation, a high formation probability of Ps was found by measurements of Doppler broadening profiles of the annihilation radiation and those of lifetime spectra. For SiO2 films grown by an atmospheric-pressure chemical vapor deposition technique using tetraethylorthosilicate and ozone, however, the formation probability of Ps drastically decreased. The inhibition of the Ps formation was attributed to interactions between positrons and –OH bonds.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355886
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  • 9
    Digitale Medien
    Digitale Medien
    Depth profile of vacancy-type defects in B+-implanted Si with a SiO2 overlayer by a variable-energy positron beam (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 25-27 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A variable-energy positron beam technique has been used to probe the vacancy-type defects in Si with a 43-nm-thick SiO2 layer induced by B+ implantation with the energy of 80 keV. From the measurements of line shape parameters as a function of incident positron energy, it was found that defects in the Si substrate are distributed in a parabolic form with the average depth shallower by 27% than the projected range of B+ ions for the specimen with a dose of 5×1012 B/cm2 and that defects are accumulated in large quantities at the SiO2 /Si interface for the specimen with higher doses.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100569
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  • 10
    Digitale Medien
    Digitale Medien
    Depth profiles on ion implantation induced vacancy-type defects in GaAs and Si observed by slow positron (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1302-1304 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In the Si+-implanted GaAs, the concentration of vacancy-type defects decreased monotonically with increasing depth below the surface. In B+- and As+-implanted Si substrates, parabolic-type distributions of vacancy-type defects were observed. The present work demonstrates that the monoenergetic positron technique is a very powerful tool for the study of vacancy-type defects near surfaces in semiconductor processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100003
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