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  • 1
    Publikationsdatum: 2011-11-09
    Beschreibung: Author(s): John C. Duda, Timothy S. English, Edward S. Piekos, William A. Soffa, Leonid V. Zhigilei, and Patrick E. Hopkins [Phys. Rev. B 84, 193301] Published Tue Nov 08, 2011
    Schlagwort(e): Semiconductors II: surfaces, interfaces, microstructures, and related topics
    Print ISSN: 1098-0121
    Digitale ISSN: 1095-3795
    Thema: Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Publikationsdatum: 2013-02-14
    Beschreibung: The Journal of Physical Chemistry B DOI: 10.1021/jp308930c
    Digitale ISSN: 1520-5207
    Thema: Chemie und Pharmazie , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Publikationsdatum: 2012-01-24
    Beschreibung: Author(s): Timothy S. English, John C. Duda, Justin L. Smoyer, Donald A. Jordan, Pamela M. Norris, and Leonid V. Zhigilei The thermal conductance of interfaces plays a major role in defining the thermal properties of nanostructured materials in which heat transfer is predominantly phonon mediated. Ongoing research has improved the understanding of factors that govern interfacial phonon transport as well as the ability ... [Phys. Rev. B 85, 035438] Published Mon Jan 23, 2012
    Schlagwort(e): Surface physics, nanoscale physics, low-dimensional systems
    Print ISSN: 1098-0121
    Digitale ISSN: 1095-3795
    Thema: Physik
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  • 4
    Publikationsdatum: 2013-07-11
    Beschreibung: The Journal of Physical Chemistry B DOI: 10.1021/jp403051k
    Digitale ISSN: 1520-5207
    Thema: Chemie und Pharmazie , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Publikationsdatum: 2016-05-27
    Beschreibung: In many animal societies where hierarchies govern access to reproduction, the social rank of individuals is related to their age and weight and slow-growing animals may lose their place in breeding queues to younger 'challengers' that grow faster. The threat of being displaced might be expected to favour the evolution of competitive growth strategies, where individuals increase their own rate of growth in response to increases in the growth of potential rivals. Although growth rates have been shown to vary in relation to changes in the social environment in several vertebrates including fish and mammals, it is not yet known whether individuals increase their growth rates in response to increases in the growth of particular reproductive rivals. Here we show that, in wild Kalahari meerkats (Suricata suricatta), subordinates of both sexes respond to experimentally induced increases in the growth of same-sex rivals by raising their own growth rate and food intake. In addition, when individuals acquire dominant status, they show a secondary period of accelerated growth whose magnitude increases if the difference between their own weight and that of the heaviest subordinate of the same sex in their group is small. Our results show that individuals adjust their growth to the size of their closest competitor and raise the possibility that similar plastic responses to the risk of competition may occur in other social mammals, including domestic animals and primates.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Huchard, Elise -- English, Sinead -- Bell, Matt B V -- Thavarajah, Nathan -- Clutton-Brock, Tim -- England -- Nature. 2016 May 25;533(7604):532-4. doi: 10.1038/nature17986.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Large Animal Research Group, Department of Zoology, University of Cambridge, Downing Street, Cambridge CB2 3EJ, UK. ; CEFE UMR 5175, CNRS - Universite de Montpellier, 1919 Route de Mende, 34293 Montpellier Cedex 5, France. ; Department of Zoology and Entomology, Mammal Research Institute, University of Pretoria, Pretoria, Gauteng 0002, South Africa.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/27225127" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0028-0836
    Digitale ISSN: 1476-4687
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Publikationsdatum: 2012-11-07
    Beschreibung: Genetic variation in the gene encoding complement factor H ( CFH ) on chromosome 1q31 has repeatedly been associated with an increased risk of age-related macular degeneration (AMD); however, previous studies have had inadequate numbers of participants across a sufficiently wide age range to determine whether the association varies by age. We conducted a genetic case–control study using data from 2294 cases and 2294 controls selected from the Melbourne Collaborative Cohort Study, matched on age, sex and region of origin. Four consistently replicated CFH single-nucleotide polymorphisms (SNPs) were genotyped: rs1061170 (Y402H), rs2274700, rs393955 and rs800292; their relationship with AMD prevalence was determined across the age range 48–86. A difference in genotype frequencies was seen across age groups, where the low-risk homozygote prevalence rose with each increasing age group. Associations with early AMD were strongly modified by age for three of the four SNPs (interaction P -value: 0.01–0.00003). An inverse association between the high-risk homozygote for each SNP and early AMD was observed in the younger age groups [odds ratios (OR) range 0.37–0.48 for age 〈55], reversing to a positive association with increasing age (OR 1.87–2.8 for age 〉75). The direction of associations for this gene change was from inverse to risk with increasing age. These findings have important implications for predictive models for AMD and potentially other age-related diseases which extrapolate risks from older cohorts, as they assume homogeneity of association by age, which might not exist.
    Print ISSN: 0964-6906
    Digitale ISSN: 1460-2083
    Thema: Biologie , Medizin
    Publiziert von Oxford University Press
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3614-3618 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In order to study the influence of strain on the formation and stability of NiSi, Ni has been deposited on strained and relaxed Si(100) n-type substrates. Strained Si substrates have been produced by depositing a pseudomorphic silicon film onto a 3000 Å thick relaxed Si0.8Ge0.2 film. Raman spectroscopy has established that the silicon film is strained. The presence of a characteristic cross-hatch pattern has been identified by atomic force microscopy. Measurements show that the sheet resistance (Rs) of the silicide formed on strained silicon remains stable up to 700 °C while the Rs of the silicide formed on bulk silicon (100) shows a significant increase at 600 °C . X-ray photoelectron spectroscopy shows that the NiSi–NiSi2 phase transition occurs at a higher temperature and is, therefore, not responsible for the Rs instability. Scanning electron microscopy measurements indicate that islanding occurs in the temperature region of the resistivity increase. Photoelectron emission microscopy has been employed to observe the surface morphology during annealing, and islanding is not observed until a higher annealing temperature for the NiSi on strained Si. The increase in Rs is apparently correlated to the islanding of NiSi which appears at lower temperature on the bulk silicon substrate than on the strained silicon substrate. The stability of the NiSi film on the strained Si substrate is related to the strain induced by thermal expansion and the increased lattice constant of the strained Si. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3973-3982 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This study explores the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical vapor deposition. Over 70 nitrogen-doped diamond samples were grown on silicon and molybdenum under varying process conditions. Under certain conditions, films can be grown which exhibit photoluminescence bands at 1.945 and 2.154 eV that are attributed to single substitutional nitrogen. Photoelectron emission microscopy with UV free electron laser excitation indicated a 0 or negative electron affinity. Field emission characteristics were measured in an ultrahigh vacuum with a variable distance anode technique. For samples grown with gas phase [N]/[C] ratios less than 10, damage from microarcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured prior to an arcing event. Contrary to other reports on nitrogen-doped diamond, these measurements indicate relatively high threshold fields (〉100 V/μm) for electron emission. We suggest that the nitrogen in these films is compensated by defects. A defect-enhanced electron emission model from these films is discussed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5238-5242 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Selective growth of arrays of silicon-doped GaN (Si:GaN) pyramids for field emitter applications has been achieved. The electron emission characteristics of these arrays has been measured using techniques such as field emission, field emission energy distribution analysis (FEED), photoemission electron microscopy (PEEM), and field emission electron microscopy (FEEM). The field emission current–voltage (I–V) results indicate an average threshold field as low as 7 V/μm for an emission current of 10 nA. It is suggested that the low threshold field value is a consequence of both the low work function of Si:GaN and the field enhancement of the pyramids. The results of the FEEM and FEED measurements indicate agreement with the field emission I–V characteristics. The FEED results indicate that the Si:GaN pyramids are conducting, and that no significant ohmic losses are present between the top contact to the array and the field emitting pyramids. The PEEM and FEEM images show that the emission from the arrays is uniform over a 150 μm field of view. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    [s.l.] : Nature Publishing Group
    Nature 127 (1931), S. 310-312 
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] WHENEVER light is produced, invisible W radiations-ultra-violet (U.V.) or infra-red (I.R.) are, almost without exception, produced at the same time. Glasses which are transparent to the visible rays are not necessarily transparent to either the ultra-violet or infra-red; and similarly, opacity to ...
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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