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  • Articles  (280)
  • Physics  (280)
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  • Articles  (280)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1927-1935 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the nonlinear properties of bulk AlGaAs and GaAs/AlGaAs multiple quantum wells (MQW) below the half-band-gap energy using subpicosecond pulses between 1.65 and 1.7 μm. In the bulk material we find a value for the nonlinear index n2 = +3.6× 10−14 cm2/W and a two-photon absorption coefficient β = 0.26 × 10−4 cm/MW. In the MQW we measure an n2 up to 2.4 times larger, and we attribute this enhancement to a stronger 1S-exciton intermediate state. The β value is up to 25 times larger in the MQW. This larger value may result from midgap states that resonantly enhance the virtual intermediate state in two-photon absorption and act as a real transition in a two-step absorption process. The resulting figure of merit (2n2/βλ) for the bulk (MQW) material is 17 (1.6), which means that these semiconductors below half band gap are appropriate for all-optical switching and quantum optics applications. We confirm that n2 is instantaneous on the 300 fs time scale of our pulses from self-phase-modulation spectra as well as time-resolved pump-probe measurements. However, we find an intriguing exchange of energy between the two orthogonal axes as evidenced by the signal along the probe axis following the negative derivative of the pump intensity. This result may be explained by self-phase modulation of the pump combined with a low-frequency Raman process that couples the modes along orthogonal axes.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4140-4148 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies have been made of the macroscopic and microscopic electrical inhomogeneity in undoped bulk GaAs single crystals grown from As/As+Ga melt ratios of 0.48–0.45. Microscopic inhomogeneity was characterized by contact resistance line scans and whole wafer anodization, which gives high-resolution two-dimensional images of the low-resistivity p-type regions within the wafers. The resistivity was nonuniform in wafers from 0.48 As/As+Ga crystals, having a W-shaped radial dependence with minima in the 〈110〉 directions and varying by six orders of magnitude across a wafer, whereas it was uniform in low-resistivity wafers from 0.45 As/As+Ga crystals at fractions of melt solidified, g〉0.4. Precise correlation of microscopic inhomogeneity with grown-in linear and cellular arrays of dislocations was obtained in nonuniform wafers, but no correlation with slip dislocations was observed. Anodization images show that the carrier concentration is quantitatively in agreement with a uniform acceptor background compensated by EL2 concentration fluctuations of factors of 2–3 at the dislocation networks. Inhomogeneity variation with g and As/As+Ga ratio is consistent with macroscopic and microscopic decrease in EL2 with melt stoichiometry.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7173-7177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant changes have been observed in the electrical properties after prolonged storage at room temperature of undoped metalorganic vapor phase epitaxial layers of Hg1−xCdxTe grown on (100) GaAs. These changes occur in uniform n-type and nonuniform n-p layer structures and are due to the out-diffusion of donors from the bulk of the layers. In situ growth of a surface passivation layer of CdTe prevents these effects and produces stable electrical properties. Uniform n-type layers grown simultaneously on (111) GaAs do not show changes in electrical properties even when not in situ passivated with CdTe. The time dependent properties do not appear to be associated with impurities and are attributed to the diffusion of a combination of native donor defects and Hg acceptor vacancies, which are estimated to have diffusion coefficients, respectively, of 7×10−14 and 2–3 ×10−16 cm2 s−1 at room temperature.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5268-5277 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The first excited electronic state (S1) vibrational dynamics of aniline(Ar)1 and aniline(CH4)1 van der Waals (vdW) clusters have been studied using molecular jet and time resolved emission spectroscopic techniques. The rates of intramolecular vibrational energy redistribution (IVR) and vibrational predissociation (VP) as functions of vibrational energy are reported for both clusters. For vibrational energy in excess of the cluster binding energy, both clusters are observed to dissociate. The dispersed emission spectra of these clusters demonstrate that aniline(Ar)1 dissociates to all energetically accessible bare molecule states and that aniline(CH4)1 dissociates selectively to only the bare molecule vibrationless state. The emission kinetics show that in the aniline(Ar)1 case, the initially excited states have nanosecond lifetimes, and intermediate cluster states have very short lifetimes. In contrast, the initially excited aniline(CH4)1 states and other intermediate vibrationally excited cluster states are very short lived (〈100 ps), and the intermediate cluster 00 state is observed. These results can be understood semiquantitatively in terms of an overall serial IVR/VP mechanism which consists of the following: (1) the rates of chromophore to vdW mode IVR are given by Fermi's golden rule, and the density of vdW vibrational states is the most important factor in determining the relative [aniline(Ar)1 vs aniline(CH4)1] rates of IVR; (2) IVR among the vdW modes is rapid; and (3) VP rates can be calculated by a restricted vdW mode phase space Rice–Ramsberger–Kassel–Marcus theory. Since the density of vdW states is three orders of magnitude greater for aniline(CH4)1 than aniline(Ar)1 at 700 cm−1, the model predicts that IVR is slow and rate limiting in aniline(Ar)1, whereas VP is slow and rate limiting in aniline(CH4)1. The agreement of these predictions with the experimental results is very good and is discussed in detail.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5435-5441 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A microcomputer-aided ultrasonic system that can be used to measure the vibratory displacements of an object is presented. A pair of low cost 40-kHz ultrasonic transducers is used to transmit ultrasound toward an object and receive the ultrasound reflected from the object. The relative motion of the object modulates the phase angle difference between the transmitted and received ultrasound signals. A single-chip microcomputer-based phase detector was designed to record and analyze the phase shift information which is then sent to a PC-AT microcomputer for processing. We have developed an ingenious method to reconstruct the relative motion of an object from the acquired data of the phase difference changes. A digital plotter based experiment was also designed for testing the performance of the whole system. The measured accuracy of the system in the reported experiments is within ±0.4 mm and the theoretical maximal measurable speed of the object is 89.6 cm/s. The main advantages of this ultrasonic vibration measurement system are high resolution, low cost, noncontact measurement and it is easily installed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5609-5617 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a fast and precise thermoregulation system incorporated within a physiological experiment on a brain slice. The thermoregulation system is used to control the temperature of a recording chamber in which the brain slice is placed. It consists of a single-chip microcomputer, a set command module, a display module, and an FLC module. A fuzzy control algorithm was developed and a fuzzy logic controller then designed for achieving fast, smooth thermostatic performance and providing precise temperature control with accuracy to 0.1 °C, from room temperature through 42 °C (experimental temperature range). The fuzzy logic controller is implemented by microcomputer software and related peripheral hardware circuits. Six operating modes of thermoregulation are offered with the system and this can be further extended according to experimental needs. The test results of this study demonstrate that the fuzzy control method is easily implemented by a microcomputer and also verifies that this method provides a simple way to achieve fast and precise high-performance control of a nonlinear thermoregulation system in a physiological brain slice experiment. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1894-1901 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new concept for digital phase meters, which in practical embodiment provides most of the commonly desired performance features such as wide bandwidth, high resolution, high speed measurement, etc., is presented. This meter emulates a Vernier caliper and inherits its characteristics. Phase difference may be measured in any period of the measured signals. In the basic theory, two phase-locked-loop circuits are used as frequency multipliers which divide each period of the input signals into multiple equal time slots, thereby emulating the divisions of space inscribed on the scales of a caliper. A simple "pseudophase detector" made of a D-type flip–flop is used to compare the location of the time slots on both of the scales, just as we use the Vernier caliper. The new meter's resolution remains very high at both very high input frequencies and output data rates and while maintaining a wide input bandwidth; a resolution of 100 at 10 MHz input and 10 MHz output is easily attainable with off-the-shelf components requiring no clock rate higher than 100 MHz. In addition to a discussion of the theory, experimental results of a test embodiment are presented. Using a 10 MHz clock, a rather crude test circuit could detect a delay time of 400 ns between an original and delayed 40 kHz signal, equivalent to a resolution of ∼65 000. © 1997 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1239-1240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a photonic integrated circuit composed of a distributed Bragg reflector laser and a fast monitoring photodiode operating at 1.54 μm wavelength. The integrated waveguide photodiode has a 3 dB bandwidth of 2 GHz with 1.2 mA/mW responsivity. We demonstrate "on chip'' monitoring of a digitally modulated laser signal at 2 Gbit/s.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2177-2179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using bulk InGaAsP as a saturable absorber we have passively mode locked a NaCl color center laser to produce transform-limited, pedestal-free pulses near 1.6 μm as short as 197 fs with up to 4.2 kW peak power. Our results simplify the saturable absorber material requirements and prove that excitons are not required for generating subpicosecond pulses. By comparing a dozen samples we find that a minimum band-edge absorbance of 40% is required to generate subpicosecond pulses, although details of the band edge are not critical. In addition, we find stable mode locking always occurs on the long-wavelength side of the laser gain peak.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2280-2282 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have utilized excitonic electrorefraction in reverse-biased InGaAsP/InP quantum well heterostructures to produce directional coupler switches with active lengths under 600 μm operating at 1.3 and 1.55 μm wavelengths.
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