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  • Other Sources  (20)
  • 1
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    Ellipsometric and optical study of amorphous hydrogenated carbon films (1986)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: A low-frequency plasma deposition system was used to prepare amorphous hydrogenated carbon (a-C:H) films. The growth energy was varied by changing the power and/or pressure of the plasma. Ellipsometry and optical absorption were used to obtain the optical energy gap, the density of states, and the refractive index. Ion sputtering was used in conjunction with ellipsometry and Auger electron spectroscopy to get absolute sputtering rates. The plasma deposited a-C:H is amorphous with an optical energy gap of approximately 2.0-2.4 eV. These a-C:H films have higher density and/or hardness, higher refractive index, and lower optical energy gaps with increasing energy of the particles in the plasma, while the density of states remains unchanged. These results are in agreement with, and give a fine-tuned positive confirmation to, an existing conjecture on the nature of the a-C:H films (Kaplan et al., 1985).
    Keywords: SOLID-STATE PHYSICS
    Type: Electrochemical Society, Journal (ISSN 0013-4651); 133; 2339-234
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  • 2
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    Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C (1989)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.
    Keywords: NONMETALLIC MATERIALS
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  • 3
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    Optical and interfacial electronic properties of diamond-like carbon films (1984)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.
    Keywords: SOLID-STATE PHYSICS
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  • 4
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    Plasma-deposited amorphous hydrogenated carbon films and their tribological properties (1989)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: Recent work on the properties of diamondlike carbon films and their dependence on preparation conditions are reviewed. The results of the study indicate that plasma deposition enables one to deposit a variety of amorphous hydrogenated carbon (a-C:H) films exhibiting more diamondlike behavior to more graphitic behavior. The plasma-deposited a-C:H can be effectively used as hard, wear-resistant, and protective lubricating films on ceramic materials such as Si(sub 3)N(sub 4) under a variety of environmental conditions such as moist air, dry nitrogen, and vacuum.
    Keywords: NONMETALLIC MATERIALS
    Type: Materials Science Forum (ISSN 0255-5476); 52-53; 645-656
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  • 5
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    Plasma deposited hydrogenated carbon on GaAs and InP (1985)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cis XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 3; 900-903
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  • 6
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    Adhesion, friction and deformation of ion-beam-deposited boron nitride films (1987)
    In:  Other Sources
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    Publication Date: 2018-12-01
    Description: The tribological properties and mechanical strength of boron nitride films were investigated. The BN films were predominantly amorphous and nonstoichiometric and contained small amounts of oxides and carbides. It was found that the yield pressure at full plasticity, the critical load to fracture, and the shear strength of interfacial adhesive bonds (considered as adhesion) depended on the type of metallic substrate on which the BN was deposited. The harder the substrate, the greater the critical load and the adhesion. The yield pressures of the BN film were 12 GPa for the 440C stainless steel substrate, 4.1 GPa for the 304 stainless steel substrate, and 3.3 GPa for the titanium substrate.
    Keywords: NONMETALLIC MATERIALS
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  • 7
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    Improved synthesis of ceramic superconductors with alkaline earth peroxides - Synthesis and processing of Ba2YCu3O(7-x) (1988)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Synthesis processes for the preparation of ceramic conductors Ba2YCu3O(7-x) from BaO2 or BaCO3 in flowing O2 or N2 are described, and the characteristics of the materials produced in these processes are compared. Results of EDAX, XRD, SEM, and dc resistivity analyses demonstrated that superconducting materials made from BaO2 were more homogeneous, denser, and more metallic than materials produced from BaCO3, because of the higher reactivity of BaO2. Potential applications of this processes are discussed.
    Keywords: SOLID-STATE PHYSICS
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  • 8
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    Interaction of Au, Ag, and Bi ions with Ba2YCu3O(7-y) - Implications for superconductor applications (1988)
    In:  Other Sources
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    Publication Date: 2019-06-28
    Description: Results are presented on the reactions of Au, Ag, and Bi ions with Ba2YCu3O(7-y) oxides and on the properties of the resultant materials. The results indicate that Au(3+) structural chemistry makes gold an excellent candidate for multiphase structures of the Ba2Y(Cu/1-x/Au/x/)3O(7-y)-type substituted superconductors. Silver is structurally and chemically compatible with the perovskite structure, but when it forms a second phase, it does so without the destruction of the superconducting phase, making silver a useful metal for metal/ceramic applications. On the other hand, bismuth was shown to degrade Tc phase or to form other phases, indicating that it may not be useful in applications with rare-earth-based superconductors.
    Keywords: SOLID-STATE PHYSICS
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  • 9
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    Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C (1988)
    In:  CASI
    Details
    Publication Date: 2019-07-27
    Description: The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.
    Keywords: NONMETALLIC MATERIALS
    Type: NASA-TM-101377 , E-4431 , NAS 1.15:101377 , International Conference on Wear of Materials; 9-13 Apr. 1989. Sponsored by A; Denver, CO; United States
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  • 10
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    Carbon films grown from plasma on III-V semiconductors (1985)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-TM-87140 , E-2766 , NAS 1.15:87140 , Meeting of the Electrochem. Soc.; Oct 11, 1985 - Oct 17, 1985; Las Vegas, NV; United States
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