ISSN:
1432-0630
Keywords:
Semiconductor laser
;
Negative resistance
;
Heterostructure diodes
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The previously observed negative resistance in double heterostructure diodes is shown to be caused by a trap generated potential barrier near the heterojunctionnGa1-x Al x As−pGaAs. The filling and emplying times were measured by observing the breakdown of the barrier with single and double pulses. Time resolved spectral measurements confirm the model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00884206
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