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Cross-sectional transmission electron microscopy of silicon LSI circuits and josephson junction devices (1987)

Du, A. Y. ; Chu, Y. M.

New York, NY : Wiley-Blackwell

Journal of Electron Microscopy Technique 7 (1987), S. 319-322

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ISSN: 0741-0581

Keywords: Cross-sectional transmission electron microscopy (XTEM) ; LSI circuit ; Life and Medical Sciences ; Cell & Developmental Biology

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Natural Sciences in General

Notes: Cross-sectional transmission electron microscopy (XTEM) has been used to diagnose silicon LSI circuits and Josephson junction devices. For LSI circuits, some typical failure problems have been presented. For Nb-Si-Nb Josephson junction, microholes in the thin silicon layer have observed, and they are responsible for the short circuiting of these devices.

Additional Material: 9 Ill.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1002/jemt.1060070411

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