ISSN:
1572-9605
Keywords:
Defect chemistry
;
mass transport
;
Bi2Sr2CaCu2O8+δ
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract It is shown that for Bi2Sr2CaCu2O8+δ the quantitative correlation between charge-carrier density, temperature, and oxygen content of the surrounding atmosphere and dopant concentration can be understood with the help of a simple defect model that relies essentially on a significant degree of defect electron trapping. This is consistent with high-temperature Hall effect measurements at different oxygen partial pressures. In addition, electrochemical experiments allow the determination of oxygen diffusion coefficients and their correlation with the defect model. The influences of anisotropy and micro structure are also discussed. The results are interpreted in the context of earlier work on YBa2Cu3O6+δ and (La, Sr)2CuO4+δ.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00728436
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