ISSN:
1432-0630
Schlagwort(e):
73.40.Lq
;
73.61.Le
;
85.30.Kk
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Pulsed Laser-Induced Epitaxy (PLIE)/Gas Immersion Laser Doping (GILD) offers several advantages over alternative epitaxial processes, especially because the process can be made spatially selective. Here, a pulsed XeCl excimer laser is used to grow poly-Si1−xGex layers with Ge fractions up to 30% by intermixing a structure of electron beam-evaporated a-Ge on poly-Si deposited on quartz. Arsenic or boron dopant is incorporated during the melt process by using, respectively, an AsF5 or BF3 gas ambient. RBS and SIMS analysis reveal that the Ge metallurgical depth, the dopant junction depth and the incorporated dopant dose scale with the laser energy density and the number of laser pulses. The sheet resistance values reached after GILD process are low enough to be suitable for the fabrication of source and drain for poly-SiGe TFTs.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00332218
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