ISSN:
1434-6036
Keywords:
73.20.-r
;
79.60.Bm
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Angle resolved core level studies of the Si 2p and W 4f levels have been carried out on the (110) surface of a WSi2 single crystal using synchrotron radiation. Surface shifted components have been revealed both in the Si 2p and W 4f spectra. Investigations were carried out at two different annealing temperatures. The results indicate Si enrichment at the surface, and a larger enrichment after the higher temperature anneals. The reactivity upon initial oxygen exposure was investigated. Strong Si oxidation was observed but chemically shifted W 4f components could also be detected.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01313018
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