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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Gettering of bulk impurities by surface damage in Hg0.8Cd0.2Te wafers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3512-3516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual impurities in Hg0.8Cd0.2Te crystal have been investigated by using secondary-ion mass spectrometry. It was observed that the impurities are richer in near-surface layer than bulk material. This phenomenon was proved to be related to defect gettering by surface damage. In addition, the measurements of Hall effect and infrared spectra in gettered and ungettered Hg0.8Cd0.2Te wafers have been performed. It was found that the electrical properties of gettered Hg0.8Cd0.2Te wafers were superior to ungettered wafers. The absorption edges moved towards shorter wavelengths and the average transmittance increased in gettered wafers. These can probably be explained by assuming the residual impurity concentration in gettered wafers is relatively low. The results indicate that the defect gettering technique can be used to effectively reduce residual impurities in Hg0.8Cd0.2Te wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348492
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of defect absorption on the absorption edge in Hg0.8Cd0.2Te (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption edges in gettered and ungettered Hg0.8Cd0.2Te alloys have been investigated. It is found that the absorption edge was moved to the short wave direction after the sample was gettered. The change of absorption edge has also been found in Hg0.8Cd0.2Te containing different mercury concentrations. Possible explanations for the phenomena are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103692
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