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Negative differential resistance of metal (CoSi2)/insulator (CaF2) triple-barrier resonant tunneling diode (1993)

Watanabe, Masahiro ; Suemasu, Takashi ; Muratake, Shigeki ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 300-302

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The electron transport and negative differential resistance in metal–insulator nanometer-thick heterostructures are reported for the first time. The structure of the samples is a resonant tunneling diode with three-barriers of 0.9-nm-thick CaF2 layers and two wells of 1.9- and 2.8-nm-thick CoSi2 layers. These layers were grown by means of partially ionized beam epitaxy for CaF2 and a two step growth technique for CoSi2. In the current-voltage characteristics at 77 K, negative differential resistance was observed in the significant number of samples and the typical peak-to-valley ratio was as high as 2. The negative differential resistance observed here can be attributed to the electron transport through the resonant levels in metal/insulator multilayered heterostructures.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108997

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