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  • 1
    Electronic Resource
    Electronic Resource
    Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1275-1277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y-Ba-Cu-O films were deposited on Al-coated Si substrates by the plasma-spray method. The Al buffer layer appears to be effective in yielding crack-free adhesive Y-Ba-Cu-O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x-ray microanalysis and x-ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101489
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  • 2
    Electronic Resource
    Electronic Resource
    Properties and device applications of hydrogenated amorphous silicon carbide films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7065-7070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon carbide (a-SiC:H) films were deposited with a radio-frequency plasma-enhanced chemical vapor deposition system which utilizes a dc electric field applied independently of the inductively coupled rf field. The source gases were SiH4 and CH4. It was found that application of an electric field directed out of the substrate surface enhances the growth rate and yields some improvements in photoconductivity. The compositions of the films were evaluated by x-ray photoelectron spectroscopy for a range of source gas mixtures. In order to assess the applicability of a-SiC:H thin films, heterojunction a-SiC:H/crystalline Si (c-Si) diodes were fabricated and their electrical characteristics evaluated. The diode capacitance-voltage results confirmed a step junction, which was consistent with the abruptness of the interface demonstrated by high-resolution transmission electron microscopy. The heterojunction diodes also showed good rectifying properties, suggesting promise for a-SiC@B:H in device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345055
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