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  • 1
    Electronic Resource
    Electronic Resource
    Normal-incidence grating spectrograph with large acceptance for inverse photoemission (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1212-1214 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spectrometer for inverse photoemission in the vacuum ultraviolet range is described. A spherical grating with an acceptance of f/4 is used in normal incidence. Two position-sensitive detectors allow the registration of spectra covering the whole range of photon energies from 8 to 28 eV in parallel. The optical resolution is 18 A(ring) for the Lyman-α line of hydrogen. A space-charge-limited electron gun with an energy spread of 0.25 eV is used to excite inverse photoemission spectra. The large acceptance angle of the grating allows one to measure spectra with high efficiency and low background level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1137977
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  • 2
    Electronic Resource
    Electronic Resource
    Ultraviolet light assisted oxygenation process for submicron YBa2Cu3O7−δ thin film devices (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5411-5418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated superconducting nanobridges and grain-boundary junctions from epitaxial YBa2Cu3O7−δ thin films with thickness between 20 and 30 nm and width down to ∼100 nm. The patterning process turned out to severely deteriorate the transport properties resulting in structural damage, corrosion, and oxygen loss. The most crucial steps are the baking procedure used to cure the electron beam resist, the resist development, and the ion beam etching process. By optimizing these steps and applying a suitable post-treatment procedure a significant enhancement of the sample quality could be achieved. An ultraviolet light assisted oxygenation procedure after the patterning process enabled us to achieve superconducting transition temperatures between 80 and 87 K and critical current densities at 4.2 K up to 4×107 A cm−2 for the nanobridges and 5×103–2×105 A cm−2 for the grain boundary junctions. At 4.2 K junctions with width down to 100 nm corresponding to a junction area down to 2.3×10−3 μm2 showed superconductivity. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459599
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  • 3
    Electronic Resource
    Electronic Resource
    Spin-dependent transport in the double-perovskite Sr2CrWO6 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3654-3656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the preparation and characterization of the double-perovskite compound Sr2CrWO6 with a Curie temperature of 390 K. We have fabricated both Sr2CrWO6 bulk sintered polycrystalline bars and high-quality epitaxial thin films on SrTiO3 substrates by pulsed-laser deposition. The samples were characterized by thermogravimetric analysis, x-ray diffraction, electrical transport, and magnetization measurements. Polycrystalline samples containing a large number of grain boundaries show a large low-field magnetoresistance of up to 100% at 5 K. At room temperature, this effect is reduced to a few percent. Our results show that Sr2CrWO6 is an interesting candidate for room-temperature magnetoelectronic materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421227
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  • 4
    Electronic Resource
    Electronic Resource
    Comparison of Josephson vortex flow transistors with different gate line configurations (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We performed numerical simulations and experiments on Josephson vortex flow transistors based on parallel arrays of YBa2Cu3O7–δ grain boundary junctions with a cross gate line allowing us to operate the same devices in two different modes named the Josephson fluxon transistor (JFT) and Josephson fluxon–antifluxon transistor (JFAT). The simulations yield a general expression for the current gain versus number of junctions and normalized loop inductance and predict higher current gain for the JFAT. The experiments are in good agreement with simulations and show improved coupling between gate line and junctions for the JFAT as compared to the JFT. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346625
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  • 5
    Electronic Resource
    Electronic Resource
    Scaling behavior of 1/f noise in high-temperature superconductor Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 120-122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extensive studies of the low frequency 1/f noise in high-temperature superconducting (HTS) Josephson junctions of various types and materials have been performed for a wide range of operating parameters. The origin of the measured voltage fluctuations can be traced back to the trapping and release of charge carriers in trapping centers in an insulating barrier, giving rise to correlated fluctuations of the junction critical current Ic and normal-state resistance Rn. We observed a linear dependence of the normalized critical current and resistance fluctuations on Rn, which suggests a constant density of trapping centers for the HTS Josephson junctions. The scaling of the normalized fluctuations is in good agreement with the previously found scaling relation IcRn∝1/Rn and supports a junction model assuming a leaky tunnel barrier. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119281
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  • 6
    Electronic Resource
    Electronic Resource
    Correlation of critical current and resistance fluctuations in bicrystal grain boundary Josephson junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1929-1931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed analysis of the low frequency 1/f noise in YBa2Cu3O7−δ and Bi2Sr2CaCu2O8+x grain boundary Josephson junctions (GBJs) fabricated on SrTiO3 bicrystal substrates. The normalized fluctuation of the critical current, δIc/Ic, and the normal resistance, δRn/Rn were found to be almost independent of temperature and the misorientation angle. Furthermore, the magnitude of the fluctuations is very similar for both high-Tc cuprates. Correlation experiments showed that the fluctuations of Ic and Rn are anti-correlated. Our analysis strongly suggests that the source of 1/f noise in high-Tc bicrystal GBJs are localized defect states in an insulating grain boundary barrier with fluctuating electron occupation. The effective charge trapping time within single traps was found to decay exponentially with increasing bias voltage. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114571
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  • 7
    Electronic Resource
    Electronic Resource
    Superconducting Nd1.85Ce0.15CuO4−y bicrystal grain boundary Josephson junctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2888-2890 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electric transport properties of symmetrical [001] tilt Nd1.85Ce0.15CuO4−y (NCCO) bicrystal grain boundary Josephson junctions (GBJs) fabricated on SrTiO3 bicrystal substrates with misorientation angles of 24° and 36.8°. The superconducting properties of the NCCO GBJs are similar to those of GBJs fabricated from the hole doped high temperature superconductors (HTS). The critical current density Jc decreases strongly with increasing misorientation angle. The products of the critical current Ic and the normal resistance Rn (∼100 μV at 4.2 K) are small compared to the gap voltage and fit well to the universal scaling law IcRn∝Jc found for GBJs fabricated from the hole doped HTS. This suggests that the symmetry of the order parameter, which most likely is different for the electron and the hole doped HTS, has little influence on the characteristic properties of symmetrical [001] tilt GBJs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121449
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  • 8
    Electronic Resource
    Electronic Resource
    Distribution of the critical current density and flux trapping in YBa2Cu3O7−δ ramp-edge Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the spatial distribution of the critical current density in YBa2Cu3O7−δ ramp edge Josephson junctions using low-temperature scanning electron microscopy. Applying this technique allows the imaging of the critical current density distribution with a spatial resolution of about 1 μm. Our measurements show that the geometry of the ramp-edge junction eases the trapping of magnetic flux quanta in the YBa2Cu3O7−δ layer covering the ramp edge. These trapped flux quanta result in a spatially inhomogeneous magnetic field parallel to the barrier layer, which in turn results in a spatially modulated supercurrent density and an unusual magnetic field dependence of the critical current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111516
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