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  • 1
    Electronic Resource
    Electronic Resource
    Electromigration-induced vacancy behavior in unpassivated thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3231-3233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is constructed where a nonequilibrium vacancy concentration resulting from electromigration-induced mass flux divergences is responsible for damage in the form of wedge-like and/or crack-like voids as well as thinning of extended areas. The damage morphology is primarily a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351367
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  • 2
    Electronic Resource
    Electronic Resource
    Numerical investigations of the electromigration boundary value problem (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1729-1731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration diffusion boundary value problem with the perfectly blocking diffusion barrier is numerically investigated. Three possible boundary conditions are identified as physically meaningful and the solutions compared at the blocking barrier. It is seen that the solution of M. Shatzkes and J. R. Lloyd [J. Appl. Phys. 59, 3890 (1986)] is a good approximation for the time to failure if the critical vacancy concentration for failure is not too near a steady-state value. A dimensionless parameter is introduced which may be useful in estimating ultimate electromigration performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351204
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  • 3
    Electronic Resource
    Electronic Resource
    The electromigration failure distribution: The fine-line case (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2117-2127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electromigration failure distribution for fine-line interconnects is unknown, but expected to be strongly affected by microstructure. Results from tests on lines with controlled grain sizes and distributions of grain sizes argue for a series model of failure elements in fine lines. A new statistical model of electromigration is developed based on an extension of the failure model of Shatzkes and Lloyd [J. Appl. Phys. 59 (1986)] incorporating the statistics of microstructure and concomittant variations in the activation energy for grain-boundary diffusion. The resulting electromigration failure distribution is well-approximated by a multilognormal distribution in the fine-line case. This approach results in a failure distribution calculated from first principles which, unlike the lognormal distribution, is scalable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348738
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  • 4
    Electronic Resource
    Electronic Resource
    Electromigration failure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7601-7604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration failure is modeled as a nucleation and growth process, where void nucleation is due to the generation of a nonequilibrium vacancy concentration from an electromigration induced mass flux divergence. Following nucleation, voids grow until equaling the width of the conductor, causing an open circuit. It is seen that if the failure process is dominated by the nucleation stage, a j−2 dependence on lifetime is observed. In this model, electromigration lifetimes are predicted without resort to adjustable parameters with reasonable accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347529
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  • 5
    Electronic Resource
    Electronic Resource
    Study of electromigration-induced resistance and resistance decay in Al thin-film conductors (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 194-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an ac Bridge technique, the resistance of thin-film (500 nm thick) Al and AlCu(5%) conductor stripes was monitored during high direct current density (1×106 A cm−2) stressing. The resistance was found to increase approximately linearly with time during stressing with a rate that was thermally activated. Surprisingly the activation energy varied considerably between nominally identical samples. After 3 h of stressing, the current was turned off and an exponential decay in the resistance was observed with a time constant of several hours. The decay was also thermally activated with an energy that varied from film to film. Both results suggest that the activation energy for resistance change during electrical stress can be significantly different in nominally identical films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99517
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  • 6
    Electronic Resource
    Electronic Resource
    Role of copper in electromigration lifetimes of aluminum alloy conductors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1167-1168 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experimental results have indicated that the traditionally conceived role of copper in Al/Cu alloys in electromigration resistance may not be correct. A simple model is proposed based on Al/Cu intermetallic precipitates acting as local diffusion barriers limiting vacancy availability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103518
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  • 7
    Electronic Resource
    Electronic Resource
    Activation energy for electromigration failure in Al–Cu conductor stripes covered with polyimide (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1235-1237 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation energy for electromigration failure was determined for Al-4% Cu conductor stripes covered with polyimide. The activation energy was measured to be 0.88 eV, which is substantially higher than that measured previously for similar systems under glass. The difference in the activation energies is attributed to the possible presence of hydrogen in the Al–Cu grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337325
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  • 8
    Electronic Resource
    Electronic Resource
    A model for conductor failure considering diffusion concurrently with electromigration resulting in a current exponent of 2 (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3890-3893 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model was constructed for electromigration failure where both Fickian diffusion and mass transport due to the electromigration driving force are considered concurrently. The solution to the resulting diffusion equation yields a current exponent of 2 and an activation energy consistent with grain-boundary self-diffusion. A modification of the standard median time to failure equation first proposed by Black is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336731
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  • 9
    Electronic Resource
    Electronic Resource
    The effect of current density and stripe length on resistance saturation during electromigration testing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2350-2352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance saturation as a function of current density and stripe length has been investigated for a two-level structure with Ti/TiN/AlCu/Ti/TiN stripes and interlevel W stud vias. A simple model relating the resistance change at saturation to the current density and stripe length is formulated for structures with short stripe lengths and blocking boundaries at both ends. Experimental results for stripe lengths of 25, 50, or 100 μm are in good agreement with the model predictions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117521
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  • 10
    Electronic Resource
    Electronic Resource
    Electromigration damage due to copper depletion in Al/Cu alloy conductors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2486-2488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of damage nucleation due to electromigration-induced copper depletion in an Al/Cu alloy is treated. The diffusion of aluminum in thin-film lines is sharply reduced by alloying with small amounts of copper. In this model, copper is depleted in a region at the cathode end of an Al/Cu alloy line. Assuming that the aluminum diffusion in this copper-deficient region is much faster than the diffusion of the copper, a quasisteady-state stress profile is established between the blocking boundary at the cathode and the copper front moving at the drift velocity. The time to reach a critical stress to initiate failure is shown to depend on the inverse of the square of the current density as observed experimentally. The model is appropriate for failure at contacts and vias, and at the end of long polycrystalline clusters in near-bamboo lines. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117506
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