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1

Digitale Medien

Silicon and silicon dioxide thermal bonding for silicon-on-insulator applications (1988)

Black, R. D. ; Arthur, S. D. ; Gilmore, R. S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 2773-2777

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: There has been a good deal of interest recently in the applicability of thermal bonding to silicon-on-insultator (SOI) technology. Thermal bonding (also called direct bonding) is accomplished by mating polished, properly hydrolyzed silicon and/or silicon dioxide surfaces, which are then annealed to promote diffusion bonding. In order to produce high-quality SOI layers it must be demonstrated that the interface betweeen the wafers is void-free over the entire surface of the wafer (4-in. wafers in our study). We have found that the standard annealing step which has been used by other groups to form the wafer bond must be followed by a hyperbaric, high-temperature annealing cycle in order to produce interfaces which are completely void-free. In addition, we have found that mating the wafers in a controlled atmosphere is necessary to insure that voids do not remain after the thermal processing is complete. We shall present transmission electron micrographs which reveal the morphology of the bonded interface on an atomic scale. We shall submit C-scan acoustic micrographs and infrared transmission thermographs which display the areal nature of the bonding voids.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.340976

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2

Digitale Medien

High-temperature annealing of implanted buried oxide in silicon (1986)

Mogro-Campero, A. ; Love, R. P. ; Lewis, N. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 2103-2105

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A silicon-on-insulator structure was formed by implanting 2×1018 oxygen ions cm−2 into crystalline silicon at 150 keV. A systematic investigation of the effect of annealing temperature was carried out by annealing for 6 h at temperatures of 1150, 1200, 1250, and 1295 °C. The microstructure and oxygen-concentration profile were investigated by using cross-sectional transmission-electron microscopy and Auger analysis. Changes were observed to occur throughout this annealing-temperature regime. After the highest annealing temperature, a single-crystal top silicon-layer of 150 nm with 4×109 dislocations cm−2 and no oxide precipitates was obtained. The 500 nm of buried oxide has very sharp interfaces, and contains crystalline-silicon inclusions near the interface with the substrate silicon.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337215

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3

Digitale Medien

Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111) (1986)

Fathauer, R. W. ; Lewis, N. ; Hall, E. L. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 3886-3894

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Si and Ge layers have been grown on CaF2/Si(111) by molecular-beam epitaxy. Both Ge and Si grow as islands, and both the island size and the spacing between nucleation sites are considerably larger for Ge (∼300 nm) than for Si (∼100 nm). In addition, Ge and Si layers are found to be a mixture of type-A (aligned with the underlying CaF2) and type-B (rotated 180° about the surface normal with respect to the underlying CaF2) regions. The crystalline quality and surface morphology of the Ge layers are much better than those of the Si layers. This is thought to be due to the larger island size of the Ge deposits and to a greater ease of movement of the boundaries between type-A and type-B regions in Ge. Hall measurements show electron mobilities of up to 664 cm2/V s in Si layers and hole mobilities of 234 cm2/V s for Ge layers. Finally, the use of a GexSi1−x-Si superlattice, when grown on a GexSi1−x buffer layer which is lattice matched to the CaF2 at the growth temperature, is shown to improve Si heteroepitaxy.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337561

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4

Digitale Medien

Epitaxial growth and critical current density of thin films of YBa2Cu3O7−x on LaAlO3 substrates (1989)

Mogro-Campero, A. ; Turner, L. G. ; Hall, E. L. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 2719-2721

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thin films of the high-temperature superconductor YBa2 Cu3 O7−x have been produced on (100) LaAlO3 substrates by coevaporation and furnace annealing. A 14-μm-wide and 400-μm-long constriction patterned on a 0.8-μm-thick film had a zero resistance transition temperature of 90 K, a transition width of 1.5 K, and a critical current density of 8×104 A cm−2 at 77 K. Although x-ray diffraction shows a definite c-axis alignment normal to the substrate plane, further analysis reveals that c-axis alignment in the substrate plane is also present. The detailed microstructural picture is revealed by transmission electron microscopy: a continuous layer, about 0.2 μm thick adjacent to the substrate, with c axis normal to the substrate plane, and the remaining top portion of the film, with the c axis in the film plane. In spite of the bilayer structure, the film remains epitaxial (the axes of the superconductor are parallel to the 〈100〉 directions of the substrate).

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.101549

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