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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of gold surfaces for use as substrates in scanning tunneling microscopy studies (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 79-84 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used scanning tunneling microscopy to characterize the surface of epitaxial gold on mica in air. We find that these surfaces are simple to prepare, are relatively inert to exposure to air or to water, and have atomically flat terraces extending for up to several hundred angstroms. The observed topography is consistent with the Au(111) surface. It is possible to produce bumps on the surface of less than 100 A(ring) in size in a controlled manner by pulsing the tip voltage while scanning. Self-diffusion of gold is observed in the decay of written features and well as in the movement of existing terrace edges. In some cases, a periodicity in both the geometry of terrace edges and the spatial variation of surface diffusion rates suggest the presence of the 22×1 surface reconstruction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343379
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature ultrahigh-vacuum scanning tunneling microscope (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3109-3112 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a multipurpose scanning tunneling microscope designed to operate in ultrahigh vacuum as well as in air, over a range extending from room temperature to liquid-nitrogen temperatures. It is a single-tube scanner design with a differential flexing approach mechanism mounted on a vibration isolation stack. The instrument features a novel in situ tip and sample exchange mechanism for extended operation under vacuum. A unique characteristic is that the vacuum chamber and all components with the exception of the gas-cooled sample holder are at room temperature. We present preliminary data taken with this instrument, demonstrating atomic resolution constant current, constant height, and multiple-bias imaging, gap-modulated current-voltage spectroscopy or simultaneous topography, and work function measurements, as well as lithography on the surfaces of graphite, Au(111) on mica, and GaAs(110).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140586
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  • 3
    Electronic Resource
    Electronic Resource
    Nanometer-scale hole formation on graphite using a scanning tunneling microscope (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1727-1729 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a reproducible technique for forming holes on a graphite surface with a scanning tunneling microscope. The holes have an average diameter of 40 A(ring) (20 A(ring) minimum) with an average resolvable spacing of 60 A(ring). Holes are produced by applying a short voltage pulse (3–8 V, 10–100 μs) across the tunneling gap which removes one or more layers of graphite in a small region directly below the tip. Arrays of hundreds of holes have been formed with yields as high as 99.6%. The writing process has a higher success rate in air or in the presence of water vapor. This suggests that the physical mechanism is a chemical process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102201
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of deformation on the temperature dependence of the resistivity of palladium–molybdenum and palladium–tungsten alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9382-9384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the temperature dependence of the resistivity of alloys of the palladium–molybdenum and palladium–tungsten systems between 10 and 300 K. These alloys exhibit a decrease in electrical resistivity after deformation, contrary to the expected increase due to increased scattering from dislocations. It is shown that these changes are associated with significant alterations in electronic structure brought about by changes in atomic configuration in the lattice. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362570
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  • 5
    Electronic Resource
    Electronic Resource
    Sensitive measurement of magnetostriction effects in thin films by means of a two-beam free-sample deflection method (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2496-2497 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a setup for the measurement of thin-film magnetostriction λ which utilizes a sensitive laser-optical measurement of the substrate bending in magnetic fields up to 530 kA/m. The sensitivity reaches, e.g., for a 10 nm thick film on a 100 μm thick Si substrate, λ=5×10−8, which corresponds to a total substrate deflection on the order of 0.1 nm. The performance is tested with Co thin films of different thicknesses and annealing states. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362436
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  • 6
    Electronic Resource
    Electronic Resource
    Imaging and modification of polymers by scanning tunneling and atomic force microscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1178-1184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct imaging of ultrathin organic films on solid surfaces is important for a variety of reasons; in particular, the use of such films as ultrathin resists for nanometer scale fabrication and information recording requires that we understand their microstrucure. We have used the Langmuir–Blodgett technique to prepare monolayer and submonolayer films of poly(octadecylacrylate) (PODA) and poly(methylmethacrylate) (PMMA) on graphite substrates. Atomic scale images obtained with the scanning tunneling microscope (STM) and the atomic force microscope of the PODA films showed a variety of structures, including isolated narrow fibrils, parallel groups of fibrils, and an ordered structure consistent with the side chain crystallization expected with that material. The fibrils observed are interpreted as individual polymer chains or small bundles of parallel chains. Images of the PMMA samples show no ordered regions. By applying voltage pulses on the STM tip, we were able to locally modify and apparently cut through the PODA fibrils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341881
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  • 7
    Electronic Resource
    Electronic Resource
    Gallium arsenide piezotransistor for dynamic pressure measurements at high temperature (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 403-405 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A piezotransistor concept for measuring transient pressures in combustion engines at high temperatures using the transversal piezoelectric effect in (100) GaAs is presented. The sensor was used without cooling to measure the pressure in a combustion chamber for a motored and fired engine. The results which are presented here are in good agreement with the signal from a commercial quartz sensor, which needs an additional preamplifier. Such an active GaAs sensor is therefore a very attractive alternative to the commonly used quartz sensors for dynamic pressure measurements at high temperatures. Compared to quartz sensors the GaAs sensor has the advantage of a possible integration of electronics on the sensor chip. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118075
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  • 8
    Electronic Resource
    Electronic Resource
    Initial stages of sputtering on Au(111) as seen by scanning tunneling microscopy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1696-1698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the evolution of the surface topography of neon-bombarded gold films, from the initial stages of sputter damage to the removal of several layers. Energy-dependent sputter yields and crater size distributions are derived from scanning tunneling microscope (STM) images which show the progressing surface erosion. A surprising duality in the behavior of surfaces prepared by deposition of atoms (growth) and "deposition of vacancies'' (erosion) is revealed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106221
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  • 9
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    Field dependent emission rates in radiation damaged GaAs (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-07-08
    Description: We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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