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  • American Institute of Physics (AIP)  (5)
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  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1879-1881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high-energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x-ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102159
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  • 2
    Electronic Resource
    Electronic Resource
    Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 954-956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary-ion mass spectroscopy measurements. The results are compared with those of In-doped HgCdTe layers grown in the (111)B orientation. In the (111)B orientation indium is incorporated in the metal site whereas in the (100) orientation it appears that indium is mainly incorporated interstitially. The results agree with a Te antisite model as a possibility for explaining the electrical behavior of (100) HgCdTe grown by MBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101734
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  • 3
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime in p-type (111)B HgCdTe grown by molecular-beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5195-5199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of electron lifetime have been carried out on unintentionally doped layers of (111)B Hg1−xCdxTe (0.216〈x〈0.320), p-type as-grown by molecular-beam epitaxy. The temperature dependence of the bulk lifetime is explained in terms of the Shockley–Read recombination mechanism for the extrinsic region. The samples have shown a deep level close to midgap. The surface recombination seen in two of the samples is accounted for. Some samples show clearly Auger-limited recombination at high temperatures. From the values of τn0 and τp0 of two samples the trap level appears to have a donorlike character.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347061
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  • 4
    Electronic Resource
    Electronic Resource
    High-quality p-type HgCdTe grown by molecular beam epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 859-862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The galvanomagnetic transport in (111)B HgCdTe p-type layers, grown by molecular beam epitaxy, was studied as a function of temperature and magnetic field strength. Experimental data on the Hall coefficient and conductivity tensor versus magnetic field have been analyzed with the assumption of three charge carriers involved in the conduction mechanism: one carrier coming from the conduction band and the other two from the complex nature of the valence band. Indeed, two kinds of positive charge carriers with completely different mobilities in the extrinsic region are seen. The extracted parameters are in very good agreement with the intrinsic concentration over a wide temperature range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345743
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical properties of Li-doped Hg1−xCdxTe(100) by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2025-2027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-type doping of HgCdTe(100) layers with lithium during growth by molecular beam epitaxy is reported. Hall measurements have been performed on these layers between 300 and 30 K. The Li concentration is found to increase with the Li cell temperature. Li-doped HgCdTe layers are estimated to have very shallow acceptor levels. Acceptor concentrations as high as 8×1018 cm−3 have been achieved. At low doping levels, due to residual donors, layers show compensation. Incorporation coefficient of Li close to 1 and almost 100% electrical efficiency for Li in molecular beam epitaxy HgCdTe layers were observed. However, Li is found to diffuse rapidly in HgCdTe layers grown by molecular beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98281
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