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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 2119-2122 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A diamond anvil high-pressure cell especially designed for single-crystal x-ray diffraction studies is described, and with its commercial STOE goniometer head the new cell fits to almost every diffractometer type in use. In this high-pressure cell the x-ray beam passes nearly perpendicular to the pressure generating force. This geometry also allows the cell to be used on Weissenberg cameras, but with double-radius film cylinders and adequately enlarged layer line screens. A knee-type lever arm system generates the thrust. In the path of the beams there are no longer larger beryllium parts, which has improved the signal-to-noise ratio. Approximately 90% of all possible non-Friedel reflections for Bragg angles up to 45° can be measured in the bisecting (cursive-theta=ω) position, up to 95% with general diffractometer settings. An analytic absorption correction was used with beryllium gasketing to eliminate the need to know the thickness of the gasket between the two diamonds. The highest pressure reached which gave satisfactory results was 2.3 GPa. Inconel gaskets were used to collect data at pressures up to 10.2 GPa. Corrections for shadowing by the beams of the cell, absorption, and overlapping of sample reflections from other single crystals inside the cell are calculated using a special control program.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6683-6686 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microwave properties of single crystalline TiO2 (rutile) were investigated. At a frequency of 7.5 GHz the loss tangent tan δ was found to increase from 1.4×10−7 at 4 K to 4×10−6 at 70 K for electric fields parallel to the crystallographic a,b plane. The high permittivity of 105 and the small tanδ in combination with the low microwave losses of high temperature superconductors (HTS) were utilized to construct a miniaturized X-band resonator with a high quality factor Q. An assembly of two YBa2Cu3O7 films of 8 mm in diameter separated by a rutile cylinder of 2 mm height provides a TE011 resonance at 9.7 GHz with Qs ranging from 6×105 at 10 K to 105 at 70 K. Frequency scaling of the losses in rutile and in the HTS films indicates Qs in excess of 106 at 1.8 GHz using YBa2Cu3O7 films of two inches in diameter. Such resonators are considered to be key elements for high-power filters in mobile communications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 966-966 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The signal/background ratio is the main problem for microcrystal diffraction experiments. Background scattering can be reduced by special mounting techniques, by reducing or avoiding air scattering, and reducing diffuse scattering from the crystal. Furthermore, the intrinsic noise of the counter system has to be made as small as possible. To avoid very long measuring time per diffraction event, area counters have to be applied in order to register several of such events at a time.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2236-2238 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A systematic study of the possibility of using beryllium gaskets in diamond-anvil pressure cells was carried out. Six different Be-BeO alloys were tested and treated in different ways in order to obtain Be gaskets suitable for pressures up to 10 GPa. The beryllium quality, the shape of the diamond anvils, the thickness of the gasket, the diameter of the sample chamber, and the depth of the gasket preindentation determine the highest obtainable pressure and its stability.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1561-1563 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of Hilbert-transform spectroscopy for the measurement of high-harmonic content of the radiation from a frequency multiplier has been demonstrated in the spectral range from 60 to 450 GHz. YBa2Cu3O7−x grain-boundary Josephson junctions made on (110) NdGaO3 bicrystal substrates have been used in these experiments. The internal Josephson radiation of the junctions reveals a Lorentzian shape due to thermal noise broadening. The possibility to obtain a spectral resolution as low as 280 MHz (∼0.01 cm −1) has been shown with a Josephson junction operating at liquid-nitrogen temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1429-1431 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality YBa2Cu3O7−x films on silicon-on-sapphire were grown using a multiple buffer layer, consisting of YSZ and CeO2. Ion channeling reveals the high crystalline perfection of the YBa2Cu3O7−x films. A channeling minimum yield for the Ba signal as low as 3% was measured. The normal state resistivity of 200 μΩ cm at 300 K, critical temperatures above 90 K, with transition widths down to 0.5 K, critical current densities above 2×106 A/cm2 at 77 K and surface resistance values of 1.4 mΩ at 18.9 GHz and 77 K confirm the high quality of the YBa2Cu3O7−x films. These results are very promising for integrated superconductor and semiconductor applications.
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