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  • 1
    Publication Date: 2011-02-11
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Edwards, Aled M -- Isserlin, Ruth -- Bader, Gary D -- Frye, Stephen V -- Willson, Timothy M -- Yu, Frank H -- England -- Nature. 2011 Feb 10;470(7333):163-5. doi: 10.1038/470163a.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉University of Toronto, Toronto, Ontario M5G 1L7, Canada. aled.edwards@utoronto.ca〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/21307913" target="_blank"〉PubMed〈/a〉
    Keywords: *Bibliometrics ; Biomedical Research/*instrumentation/methods/*statistics & numerical data/trends ; Human Genome Project ; Humans ; Ion Channels ; Protein Kinases ; Receptors, Cytoplasmic and Nuclear
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 2
    Publication Date: 2014-01-10
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Cameron, Elissa Z -- Edwards, Amy M -- White, Angela M -- England -- Nature. 2014 Jan 9;505(7482):160. doi: 10.1038/505160b.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉University of Tasmania, Hobart, Australia. ; US Department of Agriculture Forest Service, Davis, California, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24402270" target="_blank"〉PubMed〈/a〉
    Keywords: Female ; Humans ; *Internationality ; Male ; Research Personnel/*statistics & numerical data ; Sexism/*statistics & numerical data
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 183-187 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A structural study of the initial interface region formed by titanium on silicon (111) was undertaken. Thin films (100 A(ring)) of titanium were deposited in ultrahigh vacuum (UHV) conditions onto atomically clean silicon(111) wafers and annealed in situ at 25 °C intervals between 300 and 475 °C. Structural characterization of the evolving interface was performed primarily via extended x-ray absorption fine structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 400 and 425 °C. EXAFS fitting analysis reveals this transition to be from a disordered TiSi-like phase to a more ordered C49-like disilicide state. The results are compared with those previously reported for the zirconium:silicon system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4630-4635 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A structural study of the initial interface region formed by zirconium on silicon (111) was undertaken. Thin films (100 A(ring)) of zirconium were deposited in ultrahigh-vacuum conditions onto atomically, clean silicon (111) wafers and annealed in situ at 25 °C intervals between 300 and 425 °C, over which range Auger spectroscopy indicated silicon diffusion to the surface. Structural characterization of the evolving interface was performed primarily via extended x-ray-absorption fine-structure (EXAFS) measurements. Results indicate that a major structural rearrangement takes place between 350 and 375 °C. EXAFS fitting analysis reveals this transition to be from a disordered-intermixed phase to a more ordered state having interatomic distances closely resembling those of ZrSi, but lower coordination numbers. Ordering continues with progressively higher annealing temperatures until the interface region assumes the ZrSi structure at ∼425 °C. The results are discussed in terms of the free energy and strain of the interface film.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2413-2415 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloy films of Ti and up to 20% Zr were prepared by codeposition onto Si(111) surfaces in ultrahigh vacuum. After in situ thermal annealing at temperatures of ∼600 °C, the films form the C49 phase and are stable in this phase up to at least 910 °C. In contrast, Ti films on Si(111) initially react to form the C49 phase and transform to the C54 phase at ∼700 °C. The surfaces of the (Ti0.9Zr0.1)Si2 alloy films are studied by atomic force microscopy and are shown to be smoother than the surfaces of TiSi2 films on Si substrates. In addition the tendency to island formation is also not observed for annealing temperatures less than 910 °C. The sheet resistivity of the (Ti0.9Zr0.1)Si2 alloy films is found to be ∼46 μΩ cm for annealing temperatures from 600 to 910 °C. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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