Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 1850-1852
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the first study of N+-implanted silicon on insulator by energy-filtered imaging using an Opton electron microscope CEM 902 equipped Castaing–Henry electron optical system as a spectrometer. The inelastic images, energy window set at ΔE=16 eV and ΔE=25 eV according to plasmon energy loss of crystal Si and of silicon nitride respectively, give much structure information. The interface between the top silicon layer and the upper silicon nitride layer can be separated into two sublayers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349503
Permalink
|
Location |
Call Number |
Expected |
Availability |