Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 300-301
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
New alloys of hydogenated amorphous silicon with Al, Ga, S, and Se have been prepared by the rf glow discharge method. The energy gap of these materials can be varied in the 1–2 eV range, with the Al and Ga alloys being low band-gap semiconductors, and the S and Se alloys having higher energy gaps. The light to dark conductivity ratios of the various systems have been measured. The best photoresponse (102–103) was obtained with the Se and S alloys.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103720
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