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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions in the Zr–Si system studied by in situ transmission electron microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4982-4987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions in the Zr–Si system have been studied by in situ cross-section transmission electron microscopy (TEM) including high-resolution-mode energy-dispersive spectroscopy (EDS) and nanobeam electron diffraction (nanodiffraction). The as-deposited Zr film has a columnar structure and an amorphous interlayer is observed at the Zr/Si interface. The amorphous layer is found to grow during annealing at 400 °C. The growth of the amorphous layer consists of three stages: a rapid increase in the early stage, a gradual increase in the intermediate metastable stage, and saturation in the final stage. The kinetics at each stage are discussed with in situ TEM observation and ex situ EDS analysis. Annealing at 500 °C creates a ZrSi2 layer at the amorphous layer/Si interface. The phase and orientation relationship are determined from the nanodiffraction patterns. The ZrSi2 is found to grow layer by layer into the Si substrate via a ledge mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359789
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  • 2
    Electronic Resource
    Electronic Resource
    Structural comparisons of ion beam and dc magnetron sputtered spin valves by high-resolution transmission electron microscopy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6393-6395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used high-resolution transmission electron microscopy to compare the nanostructures of ion-beam and dc magnetron sputter-deposited giant magnetoresistive (GMR) spin valves and to correlate nanostructure with magnetic properties. Very low coercivities and strong exchange bias (〈8 Oe, 125 Oe) were achieved in ion-beam-deposited spin valves of the form NiFe(50)/Co(20)/Cu((approximately-greater-than)25)/Co(20)/NiFe(50)/FeMn(150)/Ta(30 A(ring)); these were compared with typical dc magnetron deposited structures of the same kind, both with and without a Ta seed layer, which exhibited similar and poorer exchange biasing but superior GMR ratios (to 8%.) Cross-sectional and plane-view samples were prepared of all three structures and examined by high-resolution electron microscopy. Near-perfect (111)-textured fcc metal and c-axis hcp Co columnar grains were revealed in the ion beam deposited sample, while some (10°) dispersion of this texture and random grain orientations were observed in the Ta-seeded and unseeded dc magnetron sputter-deposited samples, respectively. No amount of the α-FeMn (A12) phase was observed in any of the films. Exchange bias strengths and coercivity of the top Co/NiFe/FeMn layers thus correlate strongly with the degree of (111) texture. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362009
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  • 3
    Electronic Resource
    Electronic Resource
    A study of the failure mechanism of a titanium nitride diffusion barrier (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3096-3103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiN has been popularly used as a diffusion barrier between Al and Si to prevent "spiking." It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500 °C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550 °C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550 °C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al3Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al3Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al–Ti–Si and Al–Ti–N ternary phase diagrams. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371173
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor system (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 139-144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For tantalum pentoxide capacitors in 1 Gbit dynamic random access memory, titanium nitride is adopted as the top electrode. After postannealing at temperatures higher than 750 °C, the capacitance of Ta2O5 reduces due to an interfacial reaction between TiN and Ta2O5. This was studied by high resolution electron microscopy and energy dispersive spectroscopy with a 1 nm electron probe. It is found that voids form along the interface between TiN and Ta2O5 and a large proportion of Ta dissolves into the TiN film. The origin of the reaction is concluded to be a large solid solubility of Ta in TiN. After Ta outdiffusion into TiN, vacancies agglomerate and form voids in Ta2O5 and thereby reduce its capacitance. Since the driving force of the reaction is the solid solubility of Ta in TiN, the amount of the reaction is affected by the thickness of the TiN films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366732
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  • 5
    Electronic Resource
    Electronic Resource
    Solid-state amorphization at tetragonal-Ta/Cu interfaces (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 935-937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the formation of a thin amorphous layer at the tetragonal-Ta/Cu interfaces, which appear in copper metallization structures of microelectronic devices. The disordered layer grows up to 4 nm when annealed at between 400 and 600 °C. Since Ta and Cu are immiscible according to thermodynamic data, this is an unusual observation. A mechanism for the amorphous phase formation is proposed using both physical and chemical considerations. A high content of Cu is detected in the Ta layer up to 5 nm from the interface when annealed at 600 °C. Although the adhesion is promoted by the interface reaction, a sufficiently thick Ta underlayer is recommended for efficient blocking of Cu diffusion. Neither solid-state amorphization nor Cu diffusion into Ta is observed at bcc-Ta/Cu interfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124559
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence of heteroepitaxial growth of copper on beta-tantalum (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3069-3071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallographic orientations between thin-sputtered Cu film and β-Ta adhesion layer have been studied using high resolution electron microscopy and electron diffraction. Tetragonal β-Ta deposited on SiO2 has a strong texture with its closest packed plane (002) parallel to the film surface. On (002) β-Ta, the growth of (111) Cu is preferred. Even though more than 100 β-Ta grains are found under a single Cu grain, the Ta grains under a Cu grain have long range in-plane texture with [330] direction aligned parallel to the [220] direction of Cu. This orientational coincidence is explained by the heteroepitaxial relationship between the hexagonal close-packed atomic array in Cu (111) plane and the pseudohexagonal configuration of β-Ta atoms in (002) plane with a misfit strain of 7.6%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119439
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  • 7
    Electronic Resource
    Electronic Resource
    Book reviews (1995)
    Springer
    Review of industrial organization 10 (1995), S. 389-395 
    Details
    ISSN: 1573-7160
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01027082
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  • 8
    Electronic Resource
    Electronic Resource
    An empirical model of entry and exit in airline markets (1995)
    Springer
    Review of industrial organization 10 (1995), S. 541-557 
    Details
    ISSN: 1573-7160
    Keywords: Airlines ; entry ; discrete choice econometric models ; hub-and-spoke systems
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Notes: Abstract This article considers the effect of airline hub-and-spoke systems on the entry and exit behavior of rival firms in the U.S. airline industry. An analysis of simple entry and exit decisions provides insight into equilibrium conditions that are used to specify discrete choice econometric models. The empirical evidence indicates that hub-and-spoke network characteristics are significant determinants of entry and exit decisions in individual citypair markets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01026880
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  • 9
    Electronic Resource
    Electronic Resource
    Power Structure – Ownership, Integration, and Competition in the U.S. Electric Utility Industry. John E. Kwoka, Jr. (1998)
    Springer
    Review of industrial organization 13 (1998), S. 371-375 
    Details
    ISSN: 1573-7160
    Source: Springer Online Journal Archives 1860-2000
    Topics: Economics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007744525532
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  • 10
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    Evidence of heteroepitaxial growth of copper on beta-tantalum (1997)
    American Institute of Physics
    Details
    Publication Date: 1997-11-24
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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