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Size control of erbium-doped silicon nanocrystals (2000)

John, John St. ; Coffer, Jeffery L.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 1635-1637

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: This work describes the effects of pyrolysis oven length and erbium precursor on the preparation of discrete erbium-doped silicon nanoparticles. These doped nanoparticles were prepared by the co-pyrolysis of disilane and the volatile complex Er(tmhd)3 (tmhd=2,2,6,6-tetramethyl-3,5-heptanedionato). The particle sizes and size distributions were determined using high resolution and conventional transmission electron microscopy. Erbium-doped silicon nanoparticles exhibit a selected area electron diffraction pattern consistent with the diamond cubic phase and a distinctive dark contrast in the transmission electron microscope. The presence of erbium is confirmed by x-ray energy dispersive spectroscopy. In general, the mean diameter of the individual nanoparticles increases as the length of the pyrolysis oven used during their preparation is increased. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1309022

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The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells (2016)

James E. Moore, Charles J. Hages, Rakesh Agrawal, Mark S. Lundstrom and Jeffery L. Gray

American Institute of Physics (AIP)

In: Applied Physics Letters

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Publikationsdatum: 2016-07-12

Beschreibung: Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells typically exhibit high short-circuit current density ( J sc ), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage ( V oc ) , which prevent these devices from becoming commercially competitive. Recent research has attributed the low V oc in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V oc reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependence and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V oc deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V oc , high J sc , and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.

Print ISSN: 0003-6951

Digitale ISSN: 1077-3118

Thema: Physik

Publiziert von American Institute of Physics (AIP)

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