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  • 1
    Electronic Resource
    Electronic Resource
    Second-harmonic generation study of domain walls in xBi2Ti4O11-(1−x)Bi4Ti3O12 films with large dielectric permittivity (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3172-3177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-sensitive second-harmonic generation (SHG) is employed to investigate domain patterns of c-axis oriented xBi2Ti4O11-(1−x)Bi4Ti3O12 films on SrTiO3 (001) substrates. The film density increases with increasing Bi2Ti4O11 concentration up to x=0.39. No SHG signal was observed on the Bi2Ti4O11 film. Double peaks appear in the curves of the dependence of the SHG signal on the fundamental polarization (0°–180°), which suggests the net polarization of Bi4Ti3O12 domains oriented along SrTiO3 [110] and [11¯0] directions. Under transverse electric field poling along the SrTiO3 [100] direction, the films with x=0.06 and 0.12 behave differently. The double peak intensities both increase monotonically with increasing ±E fields in the film with x=0.06. However, they change reversibly for the film at x=0.12 with increasing voltage from −2.0 to +2.1 kV. Theoretical modeling suggests the possibility of 180° wall motion with an uncorrelated phase relation for the film with x=0.06, but 90° wall motion with a complete phase relation for the film with x=0.16. The large dielectric permittivity for the film with x=0.39 is assumed to come from the 90° wall motion. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445497
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic force microscopy studies of ZnSe self-organized dots fabricated on ZnS/GaP (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe self-organized dot structures on ZnS thin films were fabricated by the molecular beam epitaxy technique. In situ reflection high-energy electron diffraction studies reveal that growth interruption is required for the formation of the dot structure. Atomic force microscopy (AFM) images of the dots taken within the same day of growth reveal that the dot density increases with increasing ZnSe coverage. A density of 18 μm−2 was achieved with a coverage of 8.0 ZnSe monolayers. AFM images taken at later times (up to six months later) show ripening effects. The average dot size measured at various times after growth is consistent with the prediction of the Ostwald ripening model with a growth time constant of 4±1 days for the structure with a coverage of 8.0 ZnSe monolayers. The dot size and density in the fully ripened state are essentially independent of the initial ZnSe coverage. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122156
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3270-3272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature ultraviolet (UV) laser emission of ZnO microcrystallite thin films is reported. The hexagonal ZnO microcrystallites are grown by laser molecular beam epitaxy. They are self-assembled and parallelly arrayed on sapphire substrates. The facets of the hexagons form natural Fabry–Pérot lasing cavities. The optical gain for the room-temperature UV stimulated emission is of an excitonic nature and has a peak value an order of magnitude larger than that of bulk ZnO crystal. The observation of room-temperature UV lasing from the ordered, nano-sized ZnO crystals represents an important step towards the development of nanometer photoelectronics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121620
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  • 4
    Electronic Resource
    Electronic Resource
    Amorphous KNbO3 thin films with ferroelectriclike properties (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 164-166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous KNbO3 films are prepared by a low-cost sol–gel method. These films show a smooth surface morphology and have good waveguiding properties. Ferroelecticlike hysteresis loops are observed in these amorphous KNbO3 films with a remanant polarization of about 6μC/cm2. After corona poling, a stable effective second harmonic generation coefficient of 0.523 pm/V is achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118347
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  • 5
    Electronic Resource
    Electronic Resource
    Large third-order optical nonlinearity in Au:SiO2 composite films near the percolation threshold (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very large third-order optical nonlinearity, χ(3)∼2.5×10−6 esu, measured by a degenerate four wave mixing method using a short pulse (70 picosecond) laser, has been found in the rapid-thermal annealed Au:SiO2 composite films at concentrations below the Au percolation threshold. The dependence of the χ(3) on Au concentration, p, follows a cubic power law. The maximum figure of merit, χ(3)/α (with α being the absorption coefficient) is about 10−11 esu cm. We explain this result as due to local field enhancement arising from the Mie resonance of the Au nanoclusters, with strong interaction between the nanoclusters further promoting the effect. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119291
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  • 6
    Electronic Resource
    Electronic Resource
    Aluminum-doped n-type ZnSTe alloy grown by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2519-2521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful n-type doping of ZnSTe alloy using elemental aluminum source has been carried out by molecular beam epitaxy. Hall effect measurement (300–77 K) was performed on as-grown ZnS0.977Te0.023 epilayers with various dopant concentrations. Electron carrier concentration as high as 1.3×1019 cm−3 has been achieved. For carrier concentration higher than 5×1018 cm−3, the carrier concentration is independent of temperature, possibly indicating formation of a very shallow donor level. A group of ZnS1−xTex epilayers with different x values was doped using a constant aluminum beam flux for studying the dependence of the dopant activation on Te composition. Good activation of Al dopant was obtained for x value from 0 to a few percent, but it became poor for larger x value and finally Al became inactive for x values higher than 10%. Room temperature photoluminescence measurements on doped and undoped ZnS and ZnS1−xTex layers indicate that Al dopants form deep-level radiative centers in addition to a shallow donor level. The characteristics of these deep levels as a function of Te composition have also been studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117718
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  • 7
    Electronic Resource
    Electronic Resource
    Deep electron states in n-type Al-doped ZnS1−xTex grown by molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4412-4416 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance–voltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1−xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the PL spectra obtained from Al-doped ZnS0.977Te0.023 is lower than that of undoped ZnS0.977Te0.023, indicating that some of the Al atoms form nonradiative deep traps. Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1−xTex (x=0, 0.017, 0.04, and 0.046, respectively) epilayers reveal that Al doping leads to the formation of two electron traps 0.21 and 0.39 eV below the conduction band. DLTFS results suggest that in addition to the roles of Te as a component of the alloy as well as isoelectronic centers, Te is also involved in the formation of an electron trap, whose energy level with respect to the conduction band decreases as Te composition increases. Our results show that only a small fraction of Al atoms forms nonradiative deep defects, indicating clearly that Al is indeed a very good donor impurity for ZnS1−xTex epilayers in the range of Te composition being studied in this work. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366168
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  • 8
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of optical waveguiding strontium barium niobate films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4908-4911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strontium barium niobate waveguiding thin films were prepared by pulsed laser deposition. The relationship between the film structure and the deposition temperature were analyzed by x-ray diffraction and atomic force microscopy. Waveguiding properties such as refractive index and mode dispersion were examined and a dispersion relation was obtained for the (001)-oriented films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366355
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  • 9
    Electronic Resource
    Electronic Resource
    One- and two-photon-excited time-resolved photoluminescence investigations of bulk and surface recombination dynamics in ZnSe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4773-4776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of femtosecond time-resolved one- and two-photon-excited photoluminescence of bulk ZnSe enable us to distinguish the surface and bulk contributions to recombination dynamics. A photoluminescence lifetime of several nanoseconds or longer is measured for the bulk. A fast relaxation component with a decay time constant τT of a few tens of picoseconds observed in one-photon-pumped time-resolved spectra is identified as the result of diffusion and rapid surface recombination. A one-dimensional model taking into account surface nonradiative recombination and carrier diffusion is able to describe the observed behavior. The temperature dependence of τT shows good agreement with the theory. At room temperature, a surface recombination velocity S=5.8×105 cm s−1 and a diffusion constant D=10 cm2 s−1 are found using this model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367268
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  • 10
    Electronic Resource
    Electronic Resource
    In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2480-2483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that ZnO films consisting of epitaxially ordered arrays of closely packed hexagonal microcrystallites grown on vicinal (1000) sapphire exhibit biaxial in-plane optical anisotropy. The optical anisotropy resonance occurs near the band gap energy of ZnO. The line shape of the resonance is consistent with that induced by an in-plane anisotropic strain. The direction of the anisotropy coincides with the projection of the miscut direction of the (0001) sapphire substrates onto the sample surface plane. The magnitude of the anisotropy is generally larger for films with high crystalline quality, and on substrates with larger miscut angles. A possible origin of the strain anisotropy due to the miscut angle and the difference in thermal expansion rate of sapphire along its c and a axes is proposed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287527
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