Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 4764-4765
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amplified spontaneous emission involving the n=1 and n=2 confined states is observed at room temperature in GaAs graded-barrier single quantum-well laser material grown by metalorganic chemical vapor deposition. These no-phonon, parity-allowed emission lines correlate well with computed transition energies.The duality of lines, their strength and sharpness, and the absence of undesirable substrate luminescence permit a specification of the quantum-well width. This validation, in conjunction with other wafer-level evaluations, provides a more complete characterization of laser material intended for fabrication.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340113
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