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  • 1
    Electronic Resource
    Electronic Resource
    Current-density dependence of activation energy in high-Tc superconductor HgBa2Ca2Cu3O8+x (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6398-6401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts of the ac susceptibility of high-Tc superconductor HgBa2Ca2Cu3O8+x were measured as a function of temperature in different ac fields and frequencies at a fixed dc field. The current-density dependence of activation energy was obtained in terms of nonlinear diffusion equation of vortices. The relaxation of the current density and the exponent μ of the glassy phase were deduced from the relation between the activation energy and the current density. In addition, the pinning energy and critical current density were estimated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359113
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  • 2
    Electronic Resource
    Electronic Resource
    Optical study on the size effects in BaTiO3 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1392-1395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the size effects in ferroelectric thin film, we measured the optical transmittance and Raman spectra in BaTiO3 thin films deposited by the rf-magnetron sputtering technique on fused quartz and (111) Si substrates. A variation in the energy gap and Raman peaks with film thickness and grain size was observed and the possible origin was analyzed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363875
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and voltage dependence of ferroelectric properties of SrBi2Ta2O9 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1746-1749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by the metalorganic decomposition technique. The SBT crystalline phase appeared at 550 °C, completely crystallized at 650 °C, and little pyrochlore phase was observed in the x-ray diffraction patterns. The grains, which are rodlike, increased from about 50 to 200 nm in diameter with increasing annealing temperature from 550 to 800 °C. Typically, the SBT thin film annealed at 750 °C had Pr=8.8 μC/cm2 and Ec=29.3 kV/cm at applied voltage of 5 V, and the hysteresis loops become saturated with an increase of the maximum applied voltage. The fatigue and retention characteristics of SBT thin films dependence on applied voltage and frequency have also been investigated. It revealed that the fatigue endurance at a higher frequency and a higher applied voltage could be better than that at a lower frequency and a lower applied voltage. The retention properties of the SBT thin films are quite good over a range of 1–10 000 S, and the influence of applied voltage and bias voltage is not obvious. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369341
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3827-3829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Good ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421642
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  • 5
    Electronic Resource
    Electronic Resource
    Switching properties of SrBi2Ta2O9 thin films produced by metalorganic decomposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 369-371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process of polarization reversal in a SrBi2Ta2O9 (SBT) thin film capacitor produced by a metalorganic decomposition method was investigated. The switching time (100–600 ns) and the reversible polarization have been measured at different voltages in the range of 0–5 V. It was found that by annealing the SBT sample in AR atmosphere at 400 °C, the switching times were significantly reduced. This indicates that oxygen vacancies in the film speed up nucleation and growth of new domains. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125757
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  • 6
    Electronic Resource
    Electronic Resource
    Structures and defects induced during annealing of sputtered near-equiatomic NiTi shape memory thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2656-2658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structures and defects induced during annealing were studied in free-standing NiTi thin films produced by rf magnetron sputtering. Ni4Ti3 precipitates coherent with the (B2) matrix do not affect the shape memory behavior of the thin films annealed at 550 °C for short times. With the further increase of the annealing time and/or temperature, less coherent Ni4Ti3 precipitates develop and hinder the shape memory behavior. The embrittlement of the annealed films probably results from grain–boundary precipitation, thermal etching, and stress gradients. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117549
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  • 7
    Electronic Resource
    Electronic Resource
    Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 788-790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that fatigue increases with decreasing switching voltage and frequency, and the suppressed polarization caused at a lower switching voltage can be recovered by switching at a higher voltage. This suggests that the domain walls of SBT thin films are weakly pinned and easily depinned by a higher external field. The polarization of SBT thin films annealed in air shows more degradation than that annealed in oxygen, which indicates that the oxygen vacancy also plays an important role in fatigue behavior of SBT thin films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122002
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  • 8
    Electronic Resource
    Electronic Resource
    Retention characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3674-3676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrBi2Ta2O9 (SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that the polarization decay increases with increasing the write/read voltage within the first second. This could be attributed to the depolarization fields, which increases with increasing the retained polarization. However, we found that the polarization loss is insignificant with different write/read voltages over a range of 1–30 000 S. Furthermore, experiment indicates that there is weak pinning of domain walls existing in SBT, which plays an important role for SBT thin film over a range of 1–30 000 S with a low write/read voltage. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122859
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  • 9
    Electronic Resource
    Electronic Resource
    The phase transition and transport properties of Sr0.56C60O1.5 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3417-3419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction and dielectric measurement have been applied to investigate the phase transition and transport properties of Sr0.56C60O1.5 which is obtained by the reaction of SrCl2 with C60 anion aquatic solution. The new compound has a similar structure, but different transport properties as compared with metallic Sr-doped C60. X-ray diffraction shows that a first-order phase transition around 100 °C is related to the rearrangement of Sr2+ in the interstitial sites of the C60 lattice. The step change of ac conductivity near 100 °C is also attributed to the hopping of Sr2+ between interstitial sites. The ionic conductivity indicates the possibility of synthesizing superionic conductors based on C60 and its derivatives. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115265
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  • 10
    Electronic Resource
    Electronic Resource
    Pulsed excimer (KrF) laser induced crystallization of PbZr0.44Ti0.56O3 amorphous films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2481-2483 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous PZT thin films 600 nm thick were rf sputtered from a PbZr0.44Ti0.56O3 ceramic target with excess PbO onto glass substrates maintained at room temperature. After irradiation with a 248 nm KrF pulsed excimer laser with a power density of 2.3×107 W/m2 at a frequency of 50 Hz and a pulsed width of 30 ns for 2 min, the films crystallized into the PZT perovskite structure to a depth of about 120 nm. Comparisons of this work with PZT crystallization obtained from a traditional oven and 488 nm Ar+ laser postdeposition treatments are also given. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114002
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