ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2896-2903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H films having nitrogen content x greater than 1.3 were deposited at 300 °C by varying the ammonia-to-monosilane flow-rate ratio RN, using plasma-enhanced chemical- vapor-deposition. The characteristics of defects in the films subjected to UV illumination and anneal treatments were investigated by electron-spin-resonance (ESR) measurements. The paramagnetic Si dangling bonds (DBs) with three N atom neighbors, called the K0 center, were observed for an as-deposited film with RN of 5, and the density was favorably enhanced by exposing the film to UV light or by the UV illumination subsequent to its annealing. The K0 density decreased as the film was annealed at 550 °C after the UV illumination. The mechanisms of creation and disappearance of the K0 centers by the illumination and the annealing, respectively, were interpreted in terms of the potential fluctuation model. The K0 density in as-deposited films decreased with RN, and a new three-line spectrum was observed as RN exceeds 7. Origins of this new spectrum are discussed. The ESR spectra due to N DBs were observed for only the films subjected to the anneal/illumination sequence, and the densities of both N DBs and K0 centers decreased with increasing the annealing time before the illumination. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363142
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1938-1947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of polycrystalline Si (poly-Si) films, prepared by annealing amorphous Si (a-Si) films deposited using Si2H6, has been investigated by x-ray diffraction (XRD), Raman scattering, transmission electron microscopy (TEM), and electron spin resonance, as functions of deposition conditions, such as deposition temperature Td (450–580 °C) of the a-Si and annealing time under a fixed temperature of 600 °C. A dominant texture of the poly-Si films changed from a 〈100〉 texture for Td below 530 °C to a 〈111〉 for Td above 530 °C, independent of the deposition rate of the a-Si films and of the film thickness. Although the XRD grain size was independent of Td, the TEM grain size increased from 1.0 to 2.5 μm with decreasing Td. It is suggested that the increase in this TEM size is caused by enhanced lateral growth of 〈100〉 grains due to the presence of strain. The spin density Ns and the factor g were found to first increase with the annealing time, and rapidly decreased after the films were crystallized. It is also found that the value of g for the poly-Si films decreased from 2.0051 to 2.0048 with decreasing Td. Furthermore, effects of post-hydrogenation on the poly-Si films with different textures were investigated, and a structural change of the boundary regions in the poly-Si films is discussed in connection with a change in the dominant texture, through the corresponding change in g. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358827
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 357-366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped polycrystalline Si (poly-Si) films were deposited as a function of the rf power (0–30 W) and deposition temperature Td (600–750 °C) using disilane by a plasma-enhanced chemical vapor deposition (PECVD) method. For comparison, poly-Si films were also deposited using monosilane. The preferential orientation to a random, (100), or (110) texture was able to be selected by changing some of these deposition conditions. It was suggested that the change in the texture is caused by a change in the surface-diffusion coefficient of SiHn adsorbates and by effects of an ion bombardment, rather than by a change in the deposition rate. For PECVD poly-Si films, both the x-ray relative intensity and the crystallinity rapidly decreased with decreasing the film thickness thinner than 0.4 μm. The value of g in the electron spin resonance spectra and that of stress strongly depended on the rf power and the thickness. Further, when a film was annealed in H2 plasma, the value of g shifted from 2.0054 to 2.0043. These results are examined in terms of formation of different types of grain boundary which can be associated with a lattice deformation around the dangling bonds. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359330
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Effects of active hydrogen on the stress relaxation of amorphous SiNx:H films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1493-1500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SiNx:H (a-SiNx:H) films were deposited at 300 °C by plasma-enhanced chemical vapor deposition using SiH4–NH3–H2 mixtures. The stress, vibrational absorption, buffered HF (BHF) etch rate, and breakdown strength were investigated as a function of the gas volume ratio [H2]/[SiH4](=RH) and rf power. The [NH3]/[SiH4] ratio was maintained at 10, in which nitride films having a near-stoichiometric composition can be obtained. The measured stress for these films was intrinsic stress. It was suggested that the stress is relaxed by forming Si—NH—Si bonds instead of N—Si3 bonds. An increase in both RH and rf power values was found to decrease the stress and BHF etch rate and increase the breakdown strength. A change in the bonding structure with increasing RH and rf power is examined in terms of a thermodynamic equilibrium reaction, and it was suggested that increased H* radicals and/or H+ ions play an active role in relaxing the stress through the structural change.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356384
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Effects of in situ plasma supply in undoped and boron-doped polycrystalline silicon by low-pressure chemical vapor deposition at 500–840 °C (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4154-4160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped and boron-doped polycrystalline silicon films were prepared on a fused quartz at 500–840 °C by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) from a SiH4+B2H6+H2 mixture, using the same fabrication system. The effects of plasma (rf power) supply on the structural and electrical properties were investigated. Below 700 °C, all films show a 〈110〉 preferential orientation (P.O.), increasing with an increase in rf power. Particularly between 650 and 700 °C, an extremely stronger 〈110〉 P.O. is found at a rf power 〉15 W. Above 730 °C, undoped LPCVD and PECVD films and boron-doped LPCVD films represent a nearly random orientation. On the other hand, for boron-doped PECVD films, a strong 〈111〉 texture is observed in the intermediate doping range. The 〈110〉 texture increasing with rf power in undoped PECVD films is interpreted as indicating enhanced nucleation at the surface in contact with the gas phase. The plasma supply also has essential effects for smoothing the surface and improving the boron-doping efficiency. The effects of plasma supply are discussed in terms of increased surface diffusion of adsorbates, sputtering effect, and a contribution of hydrogen covering the surface. PECVD films are more stable for foreign contamination after fabrication than LPCVD films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341328
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Bonding and electrical properties of boron-doped microcrystalline SiNx:H films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1931-1938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline (μc-) SiNx:H films have been prepared by rf glow discharge of SiH4-B2H6-N2-H2 mixtures as a function of the substrate temperature Ts, N2 gas ratio RN, and B2H6 gas ratio RB. The bonding, electrical, and optical properties have been investigated. Crystallization is observed at Ts below 350 °C and above 700 °C, at RN below 0.04, and at RB below 5×10−3. The ratio of the volume fraction ρ of the crystalline phase to the crystallite size δ is roughly constant. The Si-N bond density agrees well with the Si-H bond density, indicating enhanced formation of N-SiH bonds. For the films with larger ρ or δ, N and H atoms are segregated in a part of the amorphouslike boundary region between crystallites, but those for the films with lower ρ or δ are uniformly distributed in the boundary region. The optical gap is mainly characterized by the N and H contents. As the film is deposited at a preparation condition giving transformation from μc to amorphous structure, the dark conductivity and photoconductivity abruptly decrease, and the slope K in the Tauc equation for optical absorption is a maximum. Furthermore, at this condition, we obtained B-doped μc-SiNx:H films with both wide gap (∼1.9 eV) and high conductivity (10−1–10−2 Ω−1 cm−1).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341746
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Bonding and electronic structures of amorphous SiNx:H (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2916-2920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding properties and annealing effects for glow-discharge amorphous silicon nitride (GD a-SiNx:H; x=0–0.33) have been investigated by means of x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and optical measurements. After annealing, a fraction of the N atoms were effused from the film. Shifts of the XPS spectra (Si2p and N1s lines) toward higher binding energy with x are observed. The opposite and large shifts are also observed in the AES spectra (SiLVV and NKLL lines). The peak binding energy EB(Si2p) of the Si2p is connected with a weighted average coordination number nav at a Si site in the SiNn (n=0,...,4) configurations, and the chemical shift per Si–N bond in the Si2p core level is 0.7 eV. For EB(Si2p) and the peak kinetic energy EK(SiLVV), a linear reduction in (EB+EK) with x is found. This result implies that the approach of the N atoms to the Si–Si bonds serves to shift the Si3p native bonding states downward. This model is consistent with the changes of the optical gap and slope B in the Tauc equation as a function of x. A reduction in EB(N1s)+EK(NKLL) with x is also found, indicating that the shifts of the N1s and NKLL are chemical shifts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337836
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3715-3722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped SiO2:F films were deposited by changing the CH4 flow rate, [CH4], using a plasma-enhanced chemical vapor deposition technique from SiH4/O2/CF4/CH4 mixtures. The thermal stability for the films deposited with a fixed temperature of 300 °C was investigated through the changes in the dielectric constant (εS), IR spectra and stress with annealing temperature, TA, from 400 to 800 °C. The breakdown strength for films as-deposited were also measured. The addition of carbon to SiO2:F films resulted in the films with low εS (up to 3.0) and high water resistivity. Addition of high [CH4] in the films resulted in stable εS for TA=500 °C or less. The CH4 addition initially decreased the breakdown strength but then increases again. Under the application of sum rule to the analysis of the vibrational absorption, it was suggested that the decrease in εS with [CH4] results from the decrease in the effective dynamic charge of Si–O dipoles along with the direct contribution of Si–F bonds incorporated to SiO2. The decrease in Si–F and Si–O peak frequencies based on the analysis of the charge transfer model suggested an increase in the Si–F and Si–O bond length, in addition to a decrease in the Si–O–Si bond angle. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372406
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Structural change of polycrystalline silicon films with different deposition temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3844-3849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Si films were deposited by changing the deposition temperature (Td=150–750 °C) and film thickness (d=0.05–0.8 μm) using plasma-enhanced chemical vapor deposition. For both the films with Td below 150–250 °C and the films thinner than 0.2 μm with Td=600–650 °C, no crystallization was found. However, the crystallinity for the films with Td=650 °C increased with an increase in d thicker than 0.2 μm. Furthermore, the dominant orientations in thicker films changed in the order of a 〈111〉, 〈110〉, and 〈100〉 texture with increasing Td. It was suggested that less Si dangling bonds in grain boundary regions are formed in strongly uniaxially oriented poly-Si films. Crystallization at a lower Td was strongly influenced by the surface morphology of the substrates, but no crystallization at Td=600–650 °C for films thinner than 0.2 μm may be due to interference among growing grains with different textures, and the crystallization for films thicker than 0.2 μm was suggested to occur as a result of solid-phase crystallization of the underlying 0.2-μm-thick noncrystallized Si layer during film deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369755
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Structure of defects in silicon oxynitride films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2598-2605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon oxynitride (a-SiNxOy) films were deposited at 300 °C using a plasma-enhanced chemical vapor deposition technique, which was carried out with variation in the nitrogen-flow-rate ratio (RN) and the oxygen-flow-rate ratio (RO) to control the nitrogen and oxygen contents, x and y, respectively. Changes in the structural properties and the characteristics of defects in the films were examined based on the electron spin resonance as well as infrared and optical absorption measurements. An increase in either RN or RO was found to decrease the deposition rate, the density of charged or neutral defects, and the randomness of the bonding network. Thus the incorporation of O or N atoms into Si nitride or Si oxide films, respectively, acts to improve the qualities of the insulating films. Furthermore, the nearest N and O atom neighboring to a Si site would be randomly bonded to the Si atom. Our results also showed that N-related dangling bonds, other than so-called K centers, are favorably created after annealing, but that the formation of Si–O bonds in the films makes the formation of such defects difficult. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343895
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...