ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
With a parallel component removed, the room temperature conductance of V||amorphous-V2O5||V sandwiches at low voltages (8〈qV/kT〈15) is stepped at discrete values G=2ie2/h, where h is Planck's constant, e is the electron charge, and i is the integer or half-integer. In contrast with similar results reported by J. Hajto, M. J. Rose, A. J. Snell, I. S. Osborne, A. E. Owen, and P. G. LeComber [J. Non Cryst. Solids 137-138, 499 (1991)] conductance quantization was observed without electroforming at high voltages. The results suggest that a ballistic point contact was formed in the nonmetal-metal interphase either by a laterally unstable contact reaction during deposition, or by electronic injection at low bias voltage. The onset of conductance quantization at a highly characteristic threshold voltage favors the latter.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110459
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