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    Publication Date: 2024-03-11
    Description: We used environmental niche modelling along with the best available species occurrence data and environmental parameters to model habitat suitability for key cold-water coral and commercially important deep-sea fish species under present-day (1951-2000) environmental conditions and to forecast changes under severe, high emissions future (2081-2100) climate projections (RCP8.5 scenario) for the North Atlantic Ocean (from 18°N to 76°N and 36°E to 98°W). The VME indicator taxa included Lophelia pertusa , Madrepora oculata, Desmophyllum dianthus, Acanela arbuscula, Acanthogorgia armata, and Paragorgia arborea. The six deep-sea fish species selected were: Coryphaenoides rupestris, Gadus morhua, blackbelly Helicolenus dactylopterus, Hippoglossoides platessoides, Reinhardtius hippoglossoides, and Sebastes mentella. We used an ensemble modelling approach employing three widely-used modelling methods: the Maxent maximum entropy model, Generalized Additive Models, and Random Forest. This dataset contains: 1) Predicted habitat suitability index under present-day (1951-2000) and future (2081-2100; RCP8.5) environmental conditions for twelve deep-sea species in the North Atlantic Ocean, using an ensemble modelling approach.  2) Climate-induced changes in the suitable habitat of twelve deep-sea species in the North Atlantic Ocean, as determined by binary maps built with an ensemble modelling approach and the 10-percentile training presence logistic (10th percentile) threshold. 3) Forecasted present-day suitable habitat loss (value=-1), gain (value=1), and acting as climate refugia (value=2) areas under future (2081-2100; RCP8.5) environmental conditions for twelve deep-sea species in the North Atlantic Ocean. Areas were identified from binary maps built with an ensemble modelling approach and two thresholds: 10-percentile training presence logistic threshold (10th percentile) and maximum sensitivity and specificity (MSS). Refugia areas are those areas predicted as suitable both under present-day and future conditions. All predictions were projected with the Albers equal-area conical projection centred in the middle of the study area. The grid cell resolution is of 3x3 km.
    Keywords: ATLAS; A Trans-Atlantic assessment and deep-water ecosystem-based spatial management plan for Europe; Climate change; cold-water corals; Deep-sea; File format; File name; File size; fisheries; fishes; habitat suitability modelling; octocorals; scleractinians; species distribution models; Uniform resource locator/link to file; vulnerable marine ecosystems
    Type: Dataset
    Format: text/tab-separated-values, 384 data points
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1980-1983 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isolated nanometer-sized InAs islands formed in a GaAs matrix by direct epitaxial growth are studied by optical spectroscopy to get information about the energy relaxation processes of the photoexcited system. Two different relaxation mechanisms that depend upon excitation density are identified: At higher density photoluminescence excitation exhibits a strong oscillatory behavior due to separate carrier relaxation, whereas at lower density direct photogeneration of excitons is dominant. Both results ensue from the strong electron–LO-phonon interaction in the system. The study of these well-characterized samples with isolated InAs islands gives insight into the optical properties of quantum dot systems made of this materials system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5645-5648 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the Raman spectra of SinGem short-period superlattices both theoretically and experimentally. A lattice dynamical model is used to generate spectra which are compared to experimental results. This comparison is useful for determining superlattice periods and detecting interface roughness.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2827-2832 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report pseudodielectric functions of SixGe1−x alloys at room temperature, measured ellipsometrically on polycrystalline samples and single-crystal epitaxial layers, in the 1.7–5.6 eV range. Accurate values of the E1 threshold energies are obtained from numerically differentiated spectra. The measured dependence of E1 on x provides an efficient way to determine the alloy composition x. The spectral and compositional dependence of the optical constants forms a data base for optical studies of Si/SiGe layered structures.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5796-5801 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report pseudodielectric functions 〈cursive-epsilon〉 of the quaternary semiconductor alloys CuAlxIn1−xSe2. Measurements were done in polycrystalline samples from 0.7 to 5.1 eV at room temperature by spectral ellipsometry. Accurate values of refractive indices n and extinction coefficients k representative of the bulk materials are reported. The dependence on composition of the reflectivity at normal incidence R(x) at the He–Ne laser wavelength λ=1.523 μm provides an optical method to determine the composition of these alloys. The structures observed in 〈cursive-epsilon〉 are analyzed by fitting the numerically differentiated spectra of d2〈cursive-epsilon〉(ω)/dω2 to analytic line shapes. The obtained energies are related to given interband transitions by taking into account the electronic band structures of the ternary end-point compounds. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 783-786 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the conventional Thomson scattering diagnostic that has been developed for multipoint measurements of the electron temperature and plasma density of the tokamak ISTTOK plasma. The design is based on a single laser pulse, two multi-input three channel spectrometers, one digital oscilloscope, and a time-delay technique. Special collection optics, optimized detectors, and high transmission monofibers with large numerical aperture have been used to increase the sensitivity and spatial resolution. The number of measurement points can be extended by increasing the number of fibers without altering the collection optics or light relay system. Results are in good agreement with those determined with other diagnostics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4445-4449 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate heteroepitaxial growth of smooth homogeneous Si1−xGex layers on crystalline silicon substrates by means of liquid-phase epitaxy. For a given saturation temperature Tsat, different alloy compositions x can be grown by varying the composition of the solutions. However, smooth epitaxial layers are obtained only up to a critical germanium content xc which increases as Tsat decreases and depends upon the choice of solvent.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1923-1928 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the complex dielectric tensor components of the chalcopyrite semiconductor CuAlSe2 in the energy range between 1.4 and 5.2 eV, at room temperature, using spectroscopic ellipsometry. We present results obtained on two single crystals grown by the traveling-heater method using In solvent. Values of refractive indices n, extinction coefficients k and normal-incidence reflectivity R in the two independent polarizations are reported. The structures observed in the energy region studied are analyzed by fitting the second-derivative spectra d2cursive-epsilon(ω)/dω2 to analytic critical-point line shapes. The obtained energies are assigned to certain electronic interband transitions by comparison with existing band structure calculations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7188-7197 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a new route to the synthesis of InAs monolayer structures in GaAs by bridging the fundamental gap between the requirement of the lowest possible substrate temperatures to suppress In segregation and the necessity to maintain sufficiently high temperatures for the growth of low-defect density material. This mediation between opposing aspects of the molecular beam epitaxy of these InAs structures is achieved by a modulation of the substrate temperature and by a minimization of the amount of GaAs cap material grown at low temperature. High-resolution x-ray diffraction and high-resolution electron microscopy combined with photoluminescence (PL) and PL excitation spectroscopies reveal excellent structural properties for our series of (311) and (100) oriented submonolayer and monolayer structures. A comparison of our PL results with already published data proves our In concentration profiles to be very sharp and from a numerical analysis we deduce an upper limit of 0.2 for the In segregation probability in these structures. In addition we obtain as upper limits for the conduction band offsets Q(100)c≤0.4 and Q(311)c≤0.55 for (100) and (311) orientations, respectively.
    Type of Medium: Electronic Resource
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