Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 3120-3122
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have grown Mn δ-doped GaAs layers on GaAs(001) substrates by molecular beam epitaxy. Secondary ion mass spectroscopy and transmission electron microscopy revealed that Mn dopants were abruptly confined. The doping profiles still retained abruptness even at elevated growth temperature up to 400 °C. Mn δ-doped GaAs samples showed high resistivity at low temperature and did not show a ferromagnetic behavior. However, in a selectively doped heterostructure (Mn δ-doped GaAs / Be-doped AlGaAs), where holes were supplied from the Be-doped AlGaAs layer, a ferromagnetic order was observed with the ferromagnetic transition temperature as high as 70 K. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1473878
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