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  • 1
    Electronic Resource
    Electronic Resource
    Formation of epitaxial β-FeSi2 films on Si(001) as studied by medium-energy ion scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1104-1109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin (∼1.3 nm) epitaxial films of β-FeSi2 were grown on Si(001) by room temperature (RT) deposition of Fe followed by annealing. During the various stages of the growth process, the lattice structure, composition, and morphology of the films were investigated by medium-energy ion scattering in conjunction with shadowing and blocking. At RT, the deposited Fe reacts with the Si(001) substrate and forms a continuous film of average composition FeSi. After annealing to 670 K, a conversion into β-FeSi2 has taken place and the film is no longer continuous. Further annealing at higher temperatures results in the formation of islands of increasing height. The β-FeSi2 films grown are composites of two azimuthal orientations with respect to the substrate: The predominant A orientation with β-FeSi2 [010](parallel) Si〈110〉 and the B orientation with β-FeSi2 [010] (parallel) Si〈100〉. The lattice strain in the films is partially relaxed. At the interface, the Fe atoms are found to be displaced from bulk lattice sites. These displacements are thought to be associated with the formation of atomic bonds at the interface of the dissimilar β-FeSi2(100) and Si(001) lattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353273
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  • 2
    Electronic Resource
    Electronic Resource
    Anomalous Sb redistribution during the preparation of delta-doping layers in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2111-2116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied Sb segregation at the moving crystal-amorphous Si(001) interface during preparation of Sb delta-doping layers. X-ray reflectivity measurements reveal a broadening of the delta-doping profile as a result of segregation during amorphous Si crystallization. From ion backscattering measurements, in conjunction with channeling and blocking, it is inferred that bulk diffusion constants are too low to account for the observed segregation behavior. The observed broadening is ascribed to enhanced diffusion at the c-Si/a-Si interface. This interfacial diffusion coefficient is determined to be at least two orders of magnitude larger than the diffusion coefficient in bulk a-Si. Possible causes of this enhancement are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349447
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray reflectivity of an Sb delta-doping layer in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5105-5108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray reflectivity measurements were made on Si(001) crystals containing a delta-doping layer of Sb atoms a few nanometers below the surface. The measurements show the Sb doping profile to be abrupt towards the substrate side of the sample and to decay towards the surface with a characteristic decay length of 1.01 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347047
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  • 4
    Electronic Resource
    Electronic Resource
    A planar x-ray waveguide with a tunable air gap for the structural investigation of confined fluids (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1723-1732 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A tunable x-ray waveguide with an air gap as the guiding medium is presented. Discrete transverse-electric modes excited in the air gap propagate almost undisturbed. Filling the air gap with a fluid allows for studies of ordering phenomena in a confined geometry. Since the guided modes are mainly confined to the guiding layer, background scattering from the plates is very low. Starting from the propagation characteristics of the modes in the empty waveguide, requirements on the x-ray source and on the positioning accuracy of the plates are derived. The construction of the waveguide is described and measurements of the far-field angular distributions of intensity exiting the waveguide are presented which illustrate the waveguide's properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150527
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  • 5
    Electronic Resource
    Electronic Resource
    Piezoelectrically driven rotary stage for use in ultrahigh vacuum (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1930-1934 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a compact high-precision rotary stage for use in ultrahigh vacuum. Its drive mechanism incorporates along its circumference two sets of diametrically opposed piezoelectric devices with combined clamping and pushing action. The maximum torque load is 0.7 Nm. The rotation is bidirectional over 360° and proceeds in steps down to 1 mdeg at a maximum speed of one revolution per 2 min. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146999
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  • 6
    Electronic Resource
    Electronic Resource
    Adapting a high-precision angle encoder to use in ultrahigh vacuum (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1341-1343 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Minor modifications to a commercially available angle encoder which normally operates in air make it suitable for use in an ultrahigh-vacuum environment. Its compact design is expected to lead to a wide range of applications in surface science instrumentation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147867
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  • 7
    Electronic Resource
    Electronic Resource
    A solution of the doping problem for Ga delta-doping layers in Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4933-4938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of Ga in silicon during the fabrication of delta-doping layers. The delta-function doping profiles were grown by molecular beam deposition following a solid phase epitaxial growth method. Medium-energy ion scattering, secondary ion mass spectrometry, and Rutherford backscattering spectrometry were used to determine the structure and composition of the grown films. The interface velocity of the crystallization front and the diffusion coefficient of the impurity atoms in the Si matrix, both relevant parameters of the growth process, were measured. Optimum growth conditions were found that yield Ga doping profiles of less than 1.0 nm (full width at half maximum), with more than 95% of the buried dopant atoms on lattice sites. For these optimum growth conditions, a model is derived explaining the observed incorporation of the Ga atoms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359782
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of the coordination number of Co atoms at the CoSi2(A,B)/Si(111) interface by transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 648-650 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure of the (111) interface between CoSi2 (type A and B) and Si is investigated by high-resolution transmission electron microscopy, combined with image simulations. Type B interfaces of CoSi2 layers formed by thermal reaction of vapor deposited Co on (111) oriented Si, of Si/CoSi2/Si heterostructures, and of CoSi2 precipitates formed by high-dose Co implantation were examined. The coordination of the Co atoms at all B-type interfaces is found to be eightfold, in accordance with theoretical predictions. Type A interfaces of CoSi2 precipitates and continuous CoSi2 layers, formed by ion implantation and subsequent annealing, showed clear evidence for the presence of sevenfold coordinated interfacial Co.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102439
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  • 9
    Electronic Resource
    Electronic Resource
    Structural characterization of an Sb delta-doping layer in silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 963-965 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta-function doped layers in Si have been prepared by deposition of Sb on Si(001) followed by solid phase epitaxy of Si. The morphology and the crystal quality of the grown structures are characterized in situ during all stages of preparation by high-resolution Rutherford backscattering spectrometry. The obtained doping profile is found to consist of a 〈0.8-nm-wide spike and a 4-nm-long tail in front of the spike. A large fraction of about 70% of the Sb atoms is confined to the spike while the remaining 30% is located in the tail. Ion channeling and blocking measurements demonstrate that at least 95% of the Sb atoms is located on substitutional lattice sites. At temperatures exceeding 1000 K, the Sb profile broadens and Sb atoms diffuse towards the surface where they desorb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101690
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  • 10
    Electronic Resource
    Electronic Resource
    The thin-film reaction between Ti and thermally grown SiO2 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2582-2584 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Medium-energy ion scattering was used to examine the reaction between a thin Ti film (4×1015 Ti atoms/cm2) and a thermally grown SiO2 substrate. The reaction was monitored after deposition at room temperature and after annealing, up to a temperature of 800 °C. During deposition, oxygen from the SiO2 substrate dissolves into the Ti film (up to 38% oxygen) without the occurrence of Ti-Si intermixing. Heating of the sample causes a loss of oxygen but no loss of titanium. Instead, islands of titanium silicide and areas of bare Si surface are formed after an 800 °C anneal for 250 min. A comparison of the room-temperature reaction for the ternary Ti-O-Si system and the binary Ti-Si system is also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339433
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