Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 8392-8398
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate a new type of metal-semiconductor-metal photodetector (MSM) on an InxGa1−xAs/GaAs strained superlattice whose performances compare to state of the art results achieved with MSMs on lattice matched In0.53Ga0.47As-on-InP material. The superlattices consist of 120 periods of 6-nm GaAs and 6–8 nm InxGa1−xAs with InAs content x between 48% and 66%. The structures were grown by molecular-beam epitaxy on GaAs substrates. Smooth morphologies and defect densities below 500 cm−2 were achieved with a growth temperature of 450–470 °C and with a minimum As to Ga pressure ratio. The cutoff wavelength and the dark current of the detectors increase with InAs content. The dark currents range between 100 nA and 3 μA at 10 V for 2500 μm2 devices and the spectral responses show cutoffs between 1.3 and 1.6 μm. The response time to short laser pulse excitation at 1.3 μm is below 30 ps full width at half maximum, and is limited by the time resolution of the measuring system. The internal quantum efficiency under pulsed excitation achieves maximum values near 60%. The very fast response time and relatively low quantum efficiency are indicative of fast carrier recombination processes in the active region of the detectors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347403
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