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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of GaN films by photoreflectance and photocurrent measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7424-7426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360400
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  • 2
    Electronic Resource
    Electronic Resource
    Transport property of Si/Si1−xGex/Si p-type modulation doped double heterostructure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2544-2546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High mobility Si/Si1−xGex/Si p-type modulation-doped double heterostructures with Ge fractions of 0.2, 0.25, 0.3 have been grown by rapid thermal process/very low pressure-chemical vapor deposition. Hole Hall mobilities as high as ∼300 cm2/V s (at 293 K and sheet carrier concentration of ∼2.6×1013 cm−2) and ∼8400 cm2/V s (at 77 K and sheet carrier concentration of ∼1.2×1013 cm−2) have been obtained for heterostructures with x=0.3. The variation of hole mobility with temperature and the influence of the Ge fraction on hole mobility were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357569
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  • 3
    Electronic Resource
    Electronic Resource
    Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1876-1878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current technique and transmission electron microscopy. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when the specimen is cooled slowly; however, both Frank partials and fault planes are decorated by Fe impurities when the specimen is cooled rapidly. It is explained that small oxygen precipitates on fault planes serve as the gettering centers for Fe impurities in the fast cooled specimen. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118718
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  • 4
    Electronic Resource
    Electronic Resource
    Precipitation behaviors of Cu and Fe on Frank-type partial dislocations in Czochralski-grown silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 214-216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precipitation behaviors of Cu and Fe on Frank-type partial dislocations bounding bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron beam-induced-current (EBIC) technique and transmission electron microscopy (TEM). Frank partials in a Cu-contaminated specimen do not exhibit an EBIC contrast at room temperature when the specimen is cooled slowly; however, in the Fe-contaminated specimen, they exhibit EBIC contrast at room temperature due to their Fe contamination. The TEM micrograph shows that Cu develops precipitate colonies in the region away from stacking faults and does not precipitate on Frank partials in the specimen. The results indicate that Fe impurity decorates Frank partials more easily than Cu impurity in Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116464
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation on higher order bands in irradiated Czochralski silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1227-1229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Fourier transform infrared absorption spectroscopy and Hall-effect measurements we have investigated the higher order bands (HOB) in the fast neutron irradiated Czochralski silicon. Introducing the thermal donors (TD) to alter the Fermi level, the defect level giving rise to the HOB is analyzed, which is proposed to be located slightly below the TD(+/++) level. Furthermore, the observation for the characteristics of the photoexcitation and decay of both the HOB and the TD+ supports the assumption that this characteristic of the HOB is associated with a slow relaxation of photoexcited carriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110847
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  • 6
    Electronic Resource
    Electronic Resource
    Study of dry oxidation of triangle-shaped silicon nanostructure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1761-1763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanostructures along [011] direction with upside down triangle cross sections on the top of the sawtooth structure with (111) facets are prepared by using the lithography technique, reactive ion etching, and anisotropic wet chemical etching. These triangle-shaped silicon nanostructures are thermally oxidized in dry oxygen over a range of temperature from 850 to 1000 °C, which is characterized by scanning electron microscopy. The self-limiting oxidation phenomenon observed in silicon nanostructures is discussed. Cross-sectional shape change of the silicon nanostructure under different oxidation temperatures is demonstrated. A silicon quantum wire is successfully fabricated by two-step thermal oxidation of the silicon nanostructures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117477
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  • 7
    Electronic Resource
    Electronic Resource
    Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a semiconducting Ge–Si–Fe alloy thin film grown on Si(100) by reactive deposition epitaxy using high vacuum evaporation technique. This work is based on the idea that the band structure of β-FeSi2 will be changed with part of the Si atoms in the lattice replaced by Ge atoms. An iron film was first deposited on a SiGe/Si(100) structure, then the alloy was formed during an annealing process. Auger electron spectroscopy and x-ray diffraction results indicate that the new alloy film can be regarded as a distorted β-FeSi2 thin film with the participation of Ge. The direct band gap of the Ge–Si–Fe alloy is determined to be 0.83 eV by optical transmission measurements, which indicate a redshift of the band gap with regard to that of β-FeSi2 (Eg=0.87 eV) thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117619
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  • 8
    Electronic Resource
    Electronic Resource
    Properties of Schottky contact of Al on SiGe alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1123-1125 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of Schottky contacts of Al on p-Si1−xGex alloys were investigated. The Si1−xGex strained layers were grown on p-Si substrates by using rapid thermal process/very low pressure-chemical vapor deposition. Low reverse currents were obtained. It was found that the Schottky barrier height of Al/p-Si1−xGex contacts decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the band gap of the strained Si1−xGex. The Fermi level at the interface is pinned at about 0.43 eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si sacrificial cap layers on the properties of Schottky contacts were also investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115733
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  • 9
    Electronic Resource
    Electronic Resource
    A method for fabricating silicon quantum wires based on SiGe/Si heterostructure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 352-354 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for fabricating silicon quantum wires with SiO2 boundaries is presented. It is accomplished by first growing Si/SiGe/Si heterostructure on silicon substrate with very low-pressure chemical vapor deposition, followed by lithography and reactive ion etching to form trench structures. Finally, the selective chemical etching of SiGe over silicon and subsequent thermal oxidation are carried out to generate expected silicon quantum wires. The result observed is demonstrated using scanning electron microscopy. Furthermore, the thermal oxidation characteristics of the silicon wires are investigated. The present method provides a well-controllable way to fabricate silicon quantum wires and is fully compatible with silicon microelectronic technology. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116713
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  • 10
    Electronic Resource
    Electronic Resource
    Studies of metal–ferroelectric–GaN structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2416-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125032
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