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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and properties of high-Tc YBa2Cu3O7−y oriented thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3493-3497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The a- and c-axis-oriented YBa2Cu3O7−y thin films were prepared by rf magnetron sputtering technique. The characterization of the thin films was carried out by inductively coupled plasma atomic emission spectroscopy, x-ray diffraction, and scanning Auger profile techniques. The Tc, Tc(H), Jc(H), and Hc2 -T(near Tc) were measured by the standard dc four-probe method. It was found that very strong anisotropy of this material was manifested in its superconducting properties, especially for c-axis-oriented thin films. It was also found that Jc depends very strongly upon stoichiometric composition 123, preferential orientation of the film, and the characteristic of the film-substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346360
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  • 2
    Electronic Resource
    Electronic Resource
    Heteroepitaxial multilayer of YBa2Cu3O7 and PrBa2Cu3O7 on SrTiO3 and LaAlO3 substrates by sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2072-2074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated epitaxially grown YBa2Cu3O7/PrBa2Cu3O7 (YBCO/PBCO) multilayer thin films on SrTiO3 and LaAlO3 substrates by dc/rf magnetron sputtering. The thicknesses of YBCO and PBCO varied from 1 to 8 unit cells. Satellite peaks in x-ray diffraction patterns clearly indicate the formation of periodic modulation structures of different wavelengths. At a certain thickness of the YBCO layer, the zero resistance transition temperature Tc0 decreased with the increase of the PBCO layer thickness. In contrast, Tc0 increased with the increase of the YBCO layer thickness at a constant PBCO layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351640
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  • 3
    Electronic Resource
    Electronic Resource
    Studies of remanence in granular Ni–SiO2 films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6137-6139 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied microstructure and remanent magnetization of the granular Ni–SiO2 films. Both analysis of the transmission electron microscope images and that of the particle size distribution via remanence studies support the hypothesis that both superparamagnetic and ferromagnetic components coexists in the nearly percolating films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362049
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  • 4
    Electronic Resource
    Electronic Resource
    Alternating current (ac) susceptibility studies in Ni-SiO2 granular film : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6022-6024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alternating current (ac) magnetic susceptibility was measured as a function of frequencies (1 Hz–1 kHz) and temperatures (5–300 K) in nominal Ni-SiO2 granular films for zero field cooled samples. When temperature is well below and well above the blocking temperature Tb, the real part of the susceptibility, χ′, remains independent of frequency, while the imaginary part of the susceptibility, χ″, is essentially zero within the experimental error. Near Tb, however, both χ′ and χ″ were found to be greatly enhanced, and χ′ decreases with increasing frequency following log(f ) dependence. A scaling method was applied for χ′(f,T) to determine the distribution of energy barriers and that of particle size. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362140
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  • 5
    Electronic Resource
    Electronic Resource
    A structural investigation of a Fe73.5Cu1Nb3Si13.5B9 nanocrystalline soft magnetic material (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3684-3686 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural characteristics of Fe73.5Cu1Nb3Si13.5B9 soft magnetic alloys that were rapidly solidified and then annealed at various temperatures between 400 and 600 °C have been studied. Variations of the Si content in the nanocrystalline α-Fe(Si) phase for the alloys with the annealing temperatures are determined. A maximum volume fraction, less than 70%, of the α-Fe(Si) phase is given by the Si-content results. The relationship between the structural characteristics and the magnetic properties for the alloys is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356086
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  • 6
    Electronic Resource
    Electronic Resource
    Anisotropic magnetoresistance and planar Hall effect in magnetic metal-insulator composite films : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5527-5529 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied anisotropic magnetoresistivity (AMR) and planar Hall effect of granular Ni-rich NiFe–SiO2 and Fe–SiO2 films for various metallic volume fraction. Planar Hall resistivity was found to be the same as the magnetoresistivity (MR) difference between the longitudinal and the transverse geometry. As metallic volume fraction decreases, we found that the MR evolves from the AMR domination in the metallic conduction region, through an intermediate conduction region with mixed AMR and negative MR behavior, to the isotropic negative MR in the tunneling conduction region. Plausible explanations to this complicated evolution are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364592
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  • 7
    Electronic Resource
    Electronic Resource
    Giant Hall effect in granular Fe–SiO2 film : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4290-4292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the resistivity, magnetoresistivity, and Hall resistivity for a few Fex(SiO2)1−x granular films with Fe volume fraction x near the metal insulator transition threshold xc. Both the ordinary Hall coefficient R0 and the saturated extraordinary Hall resistivity ρxys were found to be enhanced by a factor of 104 when x approaches xc. The largest measurable R0 and ρxys at room temperature are about 10−3 μΩ cm/G and 250 μΩ cm, respectively. By comparing with the Ni-rich NiFe–SiO2 system [A. B. Pakhomov, X. Yan, and B. Zhao, Appl. Phys. Lett. 67, 3497 (1995)], we found that the correlation between giant Hall effect and the resistivity with a −log T-like dependence is independent of the sign of the carrier. The feasibility of using such a system as a magnetic-field sensor is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364804
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation on Ag/Pb(Zr0.53Ti0.47)O3/YBa2Cu3O7−δ three-terminal system with small gate area (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2044-2046 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The three-terminal devices Ag/Pb(ZrxTi1−x)O3/YBa2Cu3O7−δ(Ag/PZT/YBCO) have been fabricated onto (100) SrTiO3 by pulsed laser deposition technique and photolithography. For the purpose of application, we specially selected the PZT layer with morphotropic phase boundary composition as the gate to lower the coercive fields and decrease the operating voltage. We tried to minimize the electrode area to 6×10−6 cm2 for deeply investigating the leakage problem and getting sufficient polarization of the PZT gate, also for the high integration in future application. From the process, we obtained the following results at 64 K: the saturation polarization and the remanent polarization reach 60 and 41 μC/cm2, respectively. The coercive field is lower than 37 kV/cm, and the breakdown field is ≥3×105 V/cm. The electric field effect measurement shows that the maximum modulation channel resistance ΔRDS/RDS is 3% under the gate voltage of ±9 V at 64 K (lower than the zero resistance temperature TC0, 70 K), at which the superconducting and normal state transition is driven by channel current IDS(IDS〉Ic, Ic=15 mA). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123751
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  • 9
    Electronic Resource
    Electronic Resource
    Surface pattern and large low-field magnetoresistance in La0.5Ca0.5MnO3 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1606-1608 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of an ordered surface structure in La0.5Ca0.5MnO3 films due to the mismatch of the thermal expansion coefficient between the film and the substrate has been investigated. The surface pattern consists of grain chains located on regular orthogonal cracks. The cracks serve as weak-link grain boundaries, and unusually enhanced low-field magnetoresistance (−14.4% in 400 Oe at 90 K) has been observed, which may be explained by spin-polarized tunneling across the grain boundaries. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123631
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  • 10
    Electronic Resource
    Electronic Resource
    High Tc Y-Ba-Cu-O thin films by ion beam sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2675-2676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Y-Ba-Cu-O thin films were successfully prepared by using ion beam sputtering. Zero resistance was reached at 90 K. The critical current density at 77 K was 4–5×104 A/cm2. The surface morphology of the films was observed by scanning electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100542
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