ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The preparation of polycrystalline GaAs films by using electrodeposition technology is described. Using scanning electron microscopy, x-ray diffraction, spectrophotometry, and a CG-1 HF C-V tester, the characteristics of the films prepared have been measured. The results show that the stoichiometry of the film approximates to GaAs. On the basis of Mott–Schottky plot, the position of energy band edges of film is calculated. Finally, the photoelectrochemical characteristic of the electrodeposited film/electrolyte junction is measured.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355837
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